A kind of growth method of LED epitaxial structure

Abstract

The invention provides a method for growing an LED epitaxial structure, comprising a step 1 of processing a sapphire substrate; a step 2 of growing low-temperature buffer layer gallium nitride and irregular islands on the substrate; a step 3 of growing a non-doped nitride gallium layer; a step 4 of growing a silicon-doped N-type gallium nitride layer; a step 5 of growing a multiple quantum well layer, including a step 5.1 of growing a silicon-doped low-temperature Inx1Ga (1-x1) N well layer, a step 5.2 of growing an indium-doped high-temperature Inx2Ga(1-x2) N well layer, a step 5.3 of growinga low-temperature gallium nitride barrier layer, and a step 5.4 of growing a high-temperature gallium nitride barrier layer; a step 6 of growing a magnesium-doped aluminum gallium nitride layer; a step 7 of growing a magnesium-doped P-type gallium nitride layer; and a step 8 of keeping the temperature at 650 680 degrees centigrade for 20 to 30 minutes, turning off a heating and gas supply system, and cooling a product with a furnace. The method can improve the light-emitting efficiency of the LED and significantly reduce the warpage of the LED epitaxial wafer.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a method for growing an LED epitaxial structure. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] The quality of the LED epitaxial indium gallium nitride (InGaN) / gallium nitride (GaN) multiple quantum wells pr...

AI Technical Summary

Problems solved by technology

At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs.

[0003] The quality of the LED epitaxial indium gallium nitride (InGaN) / gallium nitride (GaN) multiple quantum wells prepared by the existing LED multiple quantum well growth method is not high, and the radiation efficiency of the multiple quantum well light-emitting area is low, which seriously hinders the LED The improvement of luminous efficiency affects the energy saving effect of LED

In addition, at present, 4-inch LEDs generally have the problem of large warping of epitaxial wafers, and reducing warping of epitaxial wafers is a technical problem in the industry

[0004] In summary, there is an urgent need for a method for growing LED epitaxial structures to solve the problems of low luminous efficiency and warping of epitaxial wafers in existing LED multi-quantum wells.

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