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Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof

A technology of transparent conductive film and zinc oxide, which is applied to conductive materials, conductive materials, conductive layers on insulating carriers, etc., can solve the problems of high indium content and high cost, achieve low indium content, reduce indium content, and optimize film preparation The effect of process conditions

Active Publication Date: 2013-05-01
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problems of high indium content and high cost in current ITO and IZO transparent conductive films, the present invention proposes the method of co-sputtering zinc oxide ceramic targets and indium metal targets to prepare IZO transparent conductive films with low indium doping content

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  • Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof
  • Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof
  • Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof

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Embodiment 1

[0015] Example 1: Multi-target co-sputtering magnetron sputtering to prepare a low-indium doped zinc oxide transparent conductive film.

[0016] The purity of the zinc oxide ceramic target for sputtering is 99.9%, the purity of the indium metal target is 99.9%, and the relative density is ~0.90. Install the targets in two opposite target guns (e.g. figure 1 (Shown), adjust the angle between the target gun and the vertical direction to ~30°, and evacuate until the background vacuum of the vacuum chamber is higher than 2.0×10 -4 Pa. With quartz glass as the substrate, the substrate temperature is kept at 400℃, 40sccm argon gas and 2sccm oxygen gas are passed into the vacuum chamber (sccm means standard milliliters per minute), the pressure of the vacuum chamber is adjusted to 0.5Pa, and the zinc oxide target corresponds to the RF power supply The power is adjusted to 150W, the power of the radio frequency power supply corresponding to the indium target is adjusted to 15W, the bias ...

Embodiment 2

[0018] The purity of the zinc oxide ceramic target for sputtering is 99.9%, the purity of the indium metal target is 99.9%, and the relative density is ~0.90. Install the targets in two opposite target guns (e.g. figure 1 (Shown), adjust the angle between the target gun and the vertical direction to ~30°, and evacuate until the background vacuum of the vacuum chamber is higher than 2.0×10 -4 Pa. Using ordinary alkali glass as the substrate, the substrate temperature is maintained at 400 ℃, 40sccm argon gas is passed into the vacuum chamber (sccm represents standard milliliters per minute), the pressure of the vacuum chamber is adjusted to 0.5Pa, and the power of the RF power supply corresponding to the zinc oxide target is adjusted It is 150W, the corresponding radio frequency power of the indium target is adjusted to 25W, the bias voltage is adjusted to -50V, and the sample rotation rate is 6 rpm. Under this condition, the film growth rate is ~22nm / min. The target material is b...

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Abstract

The invention relates to an indium doped zinc oxide transparent conducting film and a preparation method thereof. In the method, a ZnO:In transparent conducting film with a polycrystal structure is prepared on a common alkali glass and quartz glass substrate by adopting a multitarget co-sputtering magnetron sputtering technology and adopting a zinc oxide ceramic target and indium metal target co-sputtering method. In the process condition, the pressure of the argon and oxygen mixed working gas is 0.2-2.0Pa; the volume ratio of the oxygen to the argon is 0-0.2; the sputtering power of a zinc oxide target and an indium target are respectively 50-200W and 5-40W; the substrate temperature is room temperature-500 DEG C; and the bias voltage is 0-negative 200V. The prepared transparent conducting film reduces indium atomic number content to 2 percent, has favorable conducting performance, transmissivity larger than 90 percent at 400-1,100nm and can be widely applied to the fields of solar batteries, panel display, and the like instead of ITO (Indium Tin Oxide).

Description

Technical field [0001] The invention relates to a method for preparing a zinc oxide transparent conductive film with a low indium doping content, and belongs to the technical field of optoelectronic functional materials. Background technique [0002] As an important optoelectronic functional material, oxide transparent conductive film is widely used in solar cells, flat panel displays, thermal radiation mirrors and other fields. Tin-doped indium oxide (ITO) is currently the most widely used transparent conductive film. The indium content of the film is more than 90% by mass. Its high cost drives scientific researchers to develop a new type of low indium content transparent conductive film. Zinc oxide is a wide-bandgap semiconductor with high transmittance to visible light and easy to achieve n-type doping. The transparent conductive film doped with zinc oxide as the matrix has become the current research focus. [0003] Chinese Patent Publication CN02814292.6 discloses a method f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/00H01B5/14H01B1/00H01B1/02C03C17/00C23C14/35
Inventor 曹永革黄常刚王美丽
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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