Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof

A technology of transparent conductive film and zinc oxide, which is applied to conductive materials, conductive materials, conductive layers on insulating carriers, etc., can solve the problems of high cost and high indium content, and achieve reduced indium content, low indium content, and good electrical conductivity Effect

Active Publication Date: 2010-09-15
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problems of high indium content and high cost in current ITO and IZO transparent conductive films, the present invention proposes the method of co-sputtering zinc oxide ceramic targets and indium metal targets to prepare IZO transparent conductive films with low indium doping content

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  • Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof
  • Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof
  • Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof

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Embodiment 1

[0015] Example 1: A low-indium-doped zinc oxide transparent conductive film was prepared by multi-target co-sputtering magnetron sputtering.

[0016] The purity of the zinc oxide ceramic target for sputtering is 99.9%, the purity of the indium metal target is 99.9%, and the relative density is ~0.90. Install the targets in two opposing target guns (such as figure 1 shown), adjust the angle between the target gun and the vertical direction to ~30°, and evacuate until the background vacuum degree of the vacuum chamber is higher than 2.0×10 -4 Pa. Use quartz glass as the substrate, keep the substrate temperature at 400°C, feed 40sccm argon and 2sccm oxygen into the vacuum chamber (sccm means standard milliliters per minute), adjust the pressure of the vacuum chamber to 0.5Pa, and the RF power supply corresponding to the zinc oxide target The power is adjusted to 150W, the power of the RF power supply corresponding to the indium target is adjusted to 15W, the bias voltage is adj...

Embodiment 2

[0018] The purity of the zinc oxide ceramic target for sputtering is 99.9%, the purity of the indium metal target is 99.9%, and the relative density is ~0.90. Install the targets in two opposing target guns (such as figure 1 shown), adjust the angle between the target gun and the vertical direction to be ~30°, and evacuate until the background vacuum degree of the vacuum chamber is higher than 2.0×10 -4 Pa. With ordinary alkali glass as the substrate, the substrate temperature is kept at 400°C, 40sccm argon gas (sccm means standard milliliter per minute) is introduced into the vacuum chamber, the pressure of the vacuum chamber is adjusted to 0.5Pa, and the RF power supply corresponding to the zinc oxide target is adjusted. The power of the RF power supply corresponding to the indium target is adjusted to 25W, the bias voltage is adjusted to -50V, and the sample rotation rate is 6 rpm. Under these conditions, the film growth rate is ~22nm / min. Before the formal deposition of t...

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Abstract

The invention relates to an indium doped zinc oxide transparent conducting film and a preparation method thereof. In the method, a ZnO:In transparent conducting film with a polycrystal structure is prepared on a common alkali glass and quartz glass substrate by adopting a multitarget co-sputtering magnetron sputtering technology and adopting a zinc oxide ceramic target and indium metal target co-sputtering method. In the process condition, the pressure of the argon and oxygen mixed working gas is 0.2-2.0Pa; the volume ratio of the oxygen to the argon is 0-0.2; the sputtering power of a zinc oxide target and an indium target are respectively 50-200W and 5-40W; the substrate temperature is room temperature-500 DEG C; and the bias voltage is 0-negative 200V. The prepared transparent conducting film reduces indium atomic number content to 2 percent, has favorable conducting performance, transmissivity larger than 90 percent at 400-1,100nm and can be widely applied to the fields of solar batteries, panel display, and the like instead of ITO (Indium Tin Oxide).

Description

technical field [0001] The invention relates to a preparation method of a low-indium-doped zinc oxide transparent conductive film, which belongs to the technical field of optoelectronic functional materials. Background technique [0002] Oxide transparent conductive film, as an important optoelectronic functional material, is widely used in solar cells, flat panel displays, thermal radiation mirrors and other fields. Tin-doped indium oxide (ITO) is currently the most widely used transparent conductive film. The indium content of this film is more than 90% by mass. Its high cost drives researchers to develop new low-indium content transparent conductive films. Zinc oxide is a wide bandgap semiconductor with high transmittance to visible light, and it is easy to achieve n-type doping. The transparent conductive film doped with ZnO as the matrix has become the focus of current research. [0003] Chinese patent publication CN02814292.6 discloses a method for preparing an IZO t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/00H01B5/14H01B1/00H01B1/02C03C17/00C23C14/35
Inventor 曹永革黄常刚王美丽
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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