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Method for improving conductivity of indium-doped zinc oxide transparent conductive film

A transparent conductive film, conductive performance technology, applied to the conductive layer on the insulating carrier, ion implantation plating, coating, etc., can solve the problem of low resistivity

Inactive Publication Date: 2011-03-16
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, indium-doped zinc oxide (IZO) has low resistivity (~10 -4 Ωcm) (Thin Solid Films, 2008, 516:2045; J.Korean Phys.Soc., 2004, 45:732; Jpn.J.Appl.Phys., 2004, 43:745); and when the indium content is low ( -3 Ωcm) (Thin Solid Films, 2005, 484: 184; J Mater.Sci.27(1992) 4705; Chinese Patent Publication CN200680026929.5)

Method used

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  • Method for improving conductivity of indium-doped zinc oxide transparent conductive film

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Embodiment 1

[0008] First, a zinc oxide ceramic target with a purity of 99.9% and an indium metal target are used to co-sputter and deposit an IZO transparent conductive film with a thickness of about 200nm by magnetron sputtering. is 0.5Pa, the background vacuum is 2×10 -4 Pa, the substrate temperature is 400°C, the RF sputtering power of ZnO target and Indium target is 10W / cm respectively 2 and 2W / cm 2 , the bias voltage is -100V, and the sample rotation speed is 6 rpm. Tests show that the atomic ratio of indium atoms to the sum of indium atoms and zinc atoms in the IZO transparent conductive film [In / (In+Zn)]≈3.5%, the indium content is very low, and its crystal structure is along the (002) orientation Hexagonal wurtzite phase structure, resistivity 1.3×10 -3 Ωcm, the carrier concentration is 1.1×10 21 / cm 3 , with a mobility of 4.53cm 2 V -1 S -1 , the transmittance is ~ 85% (400 ~ 1500nm).

[0009] Then put the prepared IZO transparent conductive film into the annealing furna...

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Abstract

The invention relates to a method for improving conductivity of an indium-doped zinc oxide (IZO) transparent conductive film. In the method, the IZO transparent conductive film is annealed under a vacuum state or by introducing a certain amount of inert gas (such as nitrogen gas, argon gas and the like), and hydrogen gas or mixed gas thereof into an annealing furnace, wherein the resistivity of the annealed IZO transparent conductive film is obviously reduced; and the IZO transparent conductive film can keep high permeability after the annealing. The technological conditions involved in the method are that: the pressure intensity of the atmosphere is 10<-4> to 10<5>Pa, the annealing temperature is 80 to 600 DEG C, and the annealing time is 3 seconds to 24 hours.

Description

technical field [0001] The invention relates to a method for improving the conductivity of an indium-doped zinc oxide transparent conductive film, and belongs to the technical field of optoelectronic functional materials. Background technique [0002] Oxide transparent conductive films are widely used in solar cells, flat panel displays and other fields. Tin-doped indium oxide (ITO) is currently the most widely used transparent conductive film, but the indium content is very high (>90wt%), and indium is a scarce resource, which makes the cost of the ITO transparent conductive film high. Zinc oxide (ZnO) is a cheap wide-bandgap semiconductor, which has excellent transmittance for light with a wavelength greater than 400nm, and its conductivity is significantly improved after doping with III-V impurities. Currently, indium-doped zinc oxide (IZO) has low resistivity (~10 -4 Ωcm) (Thin Solid Films, 2008, 516:2045; J.Korean Phys.Soc., 2004, 45:732; Jpn.J.Appl.Phys., 2004, 43...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/08C23C14/34H01B5/14H01L51/50
Inventor 曹永革黄常刚邓种华王美丽
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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