Doped cadmium oxide target material and preparation method and application thereof

Abstract

The invention discloses an indium oxide doped cadmium oxide target material as well as a preparation method and application thereof. The preparation method of the doped cadmium oxide target material comprises the following steps: (1) carrying out ball milling on cadmium oxide powder and indium oxide powder according to the mass ratio of CdO to In2O3 being (95-99.5):(0.5-5) for uniform mixing; (2) putting the mixture obtained in the step (1) into a mold, and then putting the mold into a vacuum hot pressing furnace; (3) vacuumizing the vacuum hot pressing furnace, when the vacuum degree is smaller than or equal to 10 Pa, starting heating, conducting heat preservation for 1-3 h at the temperature of 700-800 DEG C, starting pressurization after heat preservation is conducted for 10-50 min through pressurization pressure of 10-40 MPa, keeping the pressure maintaining time for 20-40 min, and when the temperature is reduced to 400-600 DEG C, reducing the pressure to 3-15 MPa; and (4) when the temperature is reduced to room temperature, opening a furnace door, and conducting demolding to obtain the doped cadmium oxide target material. The grain size of the target material is smaller than 10 micrometers, the bending strength is larger than 80 MPa, the sputtering effect is good, when the target material is used for preparing the CdO-based conductive film through sputtering, the film can contain In, the light-transmitting wave band of the film is widened, other impurities cannot be introduced, and the requirement for the sputtering condition is low.

Description

technical field [0001] The invention relates to the technical field of sputtering target preparation, in particular to an indium oxide-doped cadmium oxide target and a preparation method and application thereof. Background technique [0002] Cadmium oxide (CdO) is a new type of semiconductor oxide with a band gap of about 2.2eV. CdO film is transparent and light yellow, and has high optical transmittance (80% to 90%) in the visible light range (380-780nm). It is a film with high mobility and high carrier concentration, and is widely used Used in electronic devices such as solar cell windows and photosensitive detectors. [0003] Adding In to CdO can realize the tunability of the light transmission band of the CdO-based conductive film, so that more sunlight can be absorbed by the semiconductor structure of the solar cell, thereby maximizing the light utilization efficiency of the solar cell. In order to achieve the above-mentioned technical effects, the existing solution i...

AI Technical Summary

Problems solved by technology

However, since the ITO target contains Sn, the prepared film is also doped with Sn impurities, and the higher the impurity content, the greater the negative impact on the film.

In addition, using two kinds of targets at the same time for sputtering has high requirements on sputtering conditions, the sputtering process is difficult to control, and the product defect rate is high