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an indium doped zn 2 sno 4 Preparation method of nanowire

A nanowire, indium doping technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problem of not meeting the application performance requirements of conductive alloys, and achieve improved electrical and mechanical properties, low resistivity, high purity effect

Active Publication Date: 2020-06-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ordinary zinc stannate nanowires cannot meet the application performance requirements of conductive alloys in terms of electrical properties and surface properties.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Add 0.1mol dimethyl zinc to 50mL 5wt% ammonium oxalate aqueous solution, add indium nitrate to the dimethyl zinc solution at a ratio of 10 mol% of dimethyl zinc, heat and stir at 40°C for 25min A homogeneous solution A was formed.

[0023] (2) Subsequently, solution A was transferred to a high-pressure reactor with an internal volume of 100 mL, and the reactor was placed in an electric oven at 150°C for hydrothermal reaction for 36 hours, and then cooled naturally to room temperature to obtain solution B.

[0024] (3) Add 0.05 mol tin chloride to solution B, add ammonia water to adjust the pH value to 8, stir and react in a water bath at 95° C. for 2 hours, and obtain solution C.

[0025] (4) The resulting solution C is taken out and centrifuged, washed with hypochlorous acid, and dried in an oven at 70°C to obtain indium-doped Zn 2 SnO 4 Nanowires.

[0026] The aspect ratio of the nanowire is 70:1, the diameter is 20nm, the indium content is 5wt%, and the impuri...

Embodiment 2

[0028] (1) Add 0.1mol of diethylzinc to 50mL of 10wt% ammonium oxalate aqueous solution, add indium nitrate to the diethylzinc solution at a ratio of 15mol% of diethylzinc, heat and stir at 60°C for 25min to form homogeneous solution A.

[0029] (2) Subsequently, solution A was transferred to a high-pressure reactor with an internal volume of 100 mL, and the reactor was placed in an electric oven at 150°C for hydrothermal reaction for 36 hours, and then cooled naturally to room temperature to obtain solution B.

[0030] (3) Add 0.05 mol tin chloride to solution B, add ammonia water to adjust the pH value to 9, stir and react in a water bath at 95° C. for 4 hours, and obtain solution C.

[0031] (4) The resulting solution C is taken out and centrifuged, washed with hypochlorous acid, and dried in an oven at 70°C to obtain indium-doped Zn 2 SnO 4 Nanowires.

[0032] The aspect ratio of the nanowire is 50:1, the diameter is 50nm, the indium content is 10wt%, and the impurity c...

Embodiment 3

[0034] (1) Add 0.1 mol dimethyl zinc to 50 mL of 10 wt % ammonium oxalate aqueous solution, add indium chloride to the dimethyl zinc solution at a ratio of 12 mol % of dimethyl zinc, heat and stir at 50 ° C for 25 min A homogeneous solution A was formed.

[0035] (2) Subsequently, solution A was transferred to a high-pressure reactor with an internal volume of 100 mL, and the reactor was placed in an electric oven at 150°C for hydrothermal reaction for 36 hours, and then cooled naturally to room temperature to obtain solution B.

[0036] (3) Add 0.05 mol of sodium stannate to solution B, add ammonia water to adjust the pH value to 9, stir and react in a water bath at 95° C. for 3 hours, and obtain solution C.

[0037] (4) The resulting solution C is taken out and centrifuged, washed with hypochlorous acid, and dried in an oven at 70°C to obtain indium-doped Zn 2 SnO 4 Nanowires.

[0038] The aspect ratio of the nanowire is 100:1, the diameter is 30nm, the indium content is ...

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Abstract

The invention relates to the field of nano-material preparation, and aims to provide a method for preparing indium-doped Zn2SnO4 nano-wires. The method includes adding organic zinc salt into ammoniumoxalate aqueous solution and then adding indium salt into the ammonium oxalate aqueous solution; stirring the organic zinc salt and the indium salt in the ammonium oxalate aqueous solution under waterbath conditions to form uniform solution; transferring the uniform solution into reaction kettles, carrying out constant-temperature hydrothermal reaction, and then naturally cooling reaction products until the temperatures of the reaction products reach the room temperature; adding tin salt into the reaction products and regulating a pH (potential of hydrogen) value by ammonia water; placing thereaction kettles in water bath, carrying out stirring reaction, carrying out centrifugal treatment on obtained solution and carrying out cleaning by hypochlorous acid; drying solid products to obtainthe indium-doped Zn2SnO4 nano-wires. The method has the advantages that indium elements are doped, accordingly, crystal structures of zinc stannate can be improved, and the electric conductivity canbe enhanced; the bonding properties of the zinc stannate and metal silver can be improved, and accordingly the electric and mechanical properties of silver-based electrically conductive alloy materials can be improved; the indium-doped Zn2SnO4 nano-wires can be prepared by the aid of one-step hydrothermal processes and are high in purity, homogenous in size and good in dispersibility; processes for the indium-doped Zn2SnO4 nano-wires are simple, and reaction conditions are easy to control; the method is low in cost and suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation, and in particular relates to an indium-doped Zn used in the field of silver-based conductive alloy materials. 2 SnO 4 Methods of preparing nanowires. Background technique [0002] In silver-based conductive alloy materials, the structure and performance of the reinforcing phase directly affect the mechanical and electrical properties of silver-based conductive alloys. Silver-based conductive alloys need to have good electrical conductivity, thermal conductivity, processability, corrosion resistance, and welding resistance. Using inorganic metal oxides as the reinforcing phase of silver-based conductive alloy materials can significantly improve the hardness, welding resistance and arc erosion resistance of the material, but at the same time reduce the electrical and thermal conductivity of the silver matrix. For example, the currently commonly used reinforcing phases include cadmium oxid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/00B82Y30/00B82Y40/00C22C5/06C22C32/00
CPCB82Y30/00B82Y40/00C01G19/00C01P2004/16C01P2004/80C22C5/06C22C32/0021
Inventor 叶晨琳张玲洁沈涛杨辉樊先平
Owner ZHEJIANG UNIV
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