an indium doped zn 2 sno 4 Preparation method of nanowire

A nanowire, indium doping technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problem of not meeting the application performance requirements of conductive alloys, and achieve improved electrical and mechanical properties, low resistivity, high purity effect
CN109133159BActive Publication Date: 2020-06-26ZHEJIANG UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHEJIANG UNIV
Publication Date
2020-06-26
Patent Text Reader

Abstract

The invention relates to the field of nano-material preparation, and aims to provide a method for preparing indium-doped Zn2SnO4 nano-wires. The method includes adding organic zinc salt into ammoniumoxalate aqueous solution and then adding indium salt into the ammonium oxalate aqueous solution; stirring the organic zinc salt and the indium salt in the ammonium oxalate aqueous solution under waterbath conditions to form uniform solution; transferring the uniform solution into reaction kettles, carrying out constant-temperature hydrothermal reaction, and then naturally cooling reaction products until the temperatures of the reaction products reach the room temperature; adding tin salt into the reaction products and regulating a pH (potential of hydrogen) value by ammonia water; placing thereaction kettles in water bath, carrying out stirring reaction, carrying out centrifugal treatment on obtained solution and carrying out cleaning by hypochlorous acid; drying solid products to obtainthe indium-doped Zn2SnO4 nano-wires. The method has the advantages that indium elements are doped, accordingly, crystal structures of zinc stannate can be improved, and the electric conductivity canbe enhanced; the bonding properties of the zinc stannate and metal silver can be improved, and accordingly the electric and mechanical properties of silver-based electrically conductive alloy materials can be improved; the indium-doped Zn2SnO4 nano-wires can be prepared by the aid of one-step hydrothermal processes and are high in purity, homogenous in size and good in dispersibility; processes for the indium-doped Zn2SnO4 nano-wires are simple, and reaction conditions are easy to control; the method is low in cost and suitable for large-scale industrial production.
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Description

technical field

[0001] The invention belongs to the field of nanomaterial preparation, and in particular relates to an indium-doped Zn used in the field of silver-based conductive alloy materials. 2 SnO 4 Methods of preparing nanowires. Background technique

[0002] In silver-based conductive alloy materials, the structure and performance of the reinforcing phase directly affect the mechanical and electrical properties of silver-based conductive alloys. Silver-based conductive alloys need to have good electrical conductivity, thermal conductivity, processability, corrosion resistance, and welding resistance. Using inorganic metal oxides as the reinforcing phase of silver-based conductive alloy materials can significantly improve the hardness, welding resistance and arc erosion resistance of the material, but at the same time reduce the electrical and thermal conductivity of the silver matrix. For example, the currently commonly used reinforcing phases include cadmium oxid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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