Bismuth trioxide modified indium-doped zinc oxide material and preparation and application thereof

A technology of bismuth trioxide and zinc oxide, which is applied in the direction of active material electrodes, nickel storage batteries, structural parts, etc., can solve the problems of reduced utilization of active materials, dendrite growth of zinc negative electrodes, battery capacity attenuation, etc., and the method is simple, Effect of high specific capacity and long cycle life

Pending Publication Date: 2022-05-27
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the main problems encountered in the research of zinc-nickel secondary power supply are short battery life and gas swelling. The main reason is that the zinc negative electrode has problems such as dendrite growth, deformation and hydrogen evolution, which leads to a decrease in the utilization rate of active materials and a rapid battery capacity. Decay and Inflation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bismuth trioxide modified indium-doped zinc oxide material and preparation and application thereof
  • Bismuth trioxide modified indium-doped zinc oxide material and preparation and application thereof
  • Bismuth trioxide modified indium-doped zinc oxide material and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The present invention is a preparation method of a negative electrode material of a zinc-nickel oxide secondary battery modified by dibismuth trioxide modified with indium, comprising the following steps:

[0036] Step 1, preparation of bismuth trioxide modified indium-doped zinc oxide material

[0037]Zinc acetate and indium chloride are dissolved in water, urea and potassium citrate are added at the same time, and the reactant is subjected to ultrasonic treatment after stirring uniformly. Afterwards, the obtained mixture was transferred to a reactor and reacted at a certain temperature for a period of time. After the reaction kettle was cooled to room temperature, it was centrifuged and washed three times with deionized water, and then dried in a vacuum drying oven to obtain an indium-doped zinc oxide material.

[0038] The obtained indium-doped zinc oxide is dispersed in water and stirred, bismuth nitrate is added to continue stirring, and then the obtained mixture ...

Embodiment 1

[0045] Step 1, preparation of bismuth trioxide modified indium-doped zinc oxide material

[0046] Dissolve 1.3170g of zinc acetate and 0.0395g of indium chloride in 70mL of water, add 2.8818g of urea and 0.1838g of potassium citrate at the same time, stir for 5 minutes until uniform, and then ultrasonically treat the reactant for 10 minutes, then transfer the resulting solution to the reaction In the kettle, and reacted at 120 ° C for 12 h. After the reaction kettle was cooled to room temperature, it was centrifuged and washed three times with deionized water, and then dried in a vacuum drying oven at 60° C. for 10 h to obtain an indium-doped zinc oxide material.

[0047] Weigh 0.36 g of the obtained indium-doped zinc oxide material and disperse it in 70 mL of water, add 0.12 g of bismuth nitrate and stir until uniform for 5 minutes, transfer the obtained solution to a reaction kettle, and react at 120° C. for 12 h. When the reaction kettle was cooled to room temperature, it ...

Embodiment 2

[0054] Step 1, preparation of bismuth trioxide modified indium-doped zinc oxide material

[0055] Dissolve 1.3170g of zinc acetate and 0.0790g of indium chloride in 70mL of water, add 2.8818g of urea and 0.1838g of potassium citrate at the same time, stir for 5 minutes until uniform, and then sonicate the reactant for 10 minutes, then transfer the resulting solution to the reaction In the kettle, and at a certain 120 ° C, the reaction was carried out for a period of 12 h. After the reaction kettle was cooled to room temperature, it was centrifuged and washed three times with deionized water, and then dried in a vacuum drying oven at 60° C. for 10 h to obtain an indium-doped zinc oxide material.

[0056] Weigh 0.36 g of the obtained indium-doped zinc oxide material and disperse it in 70 mL of water, add 0.12 g of bismuth nitrate and stir until uniform for 5 minutes, transfer the obtained solution to a reaction kettle, and react at 120° C. for 12 h. After the reaction kettle wa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention belongs to the related fields of inorganic chemical nano materials and electrochemical technologies, and relates to preparation of a bismuth trioxide modified indium-doped zinc oxide material and a general method for applying the bismuth trioxide modified indium-doped zinc oxide material to a negative electrode of a zinc-nickel secondary battery. An indium element is doped into a position where a zinc oxide lattice replaces a part of zinc element by using a hydrothermal synthesis method; and then modifying bismuth trioxide on the surfaces of the indium-doped zinc oxide microspheres. The quantity of free electrons in zinc oxide can be increased by doping the indium element, so that the carrier concentration can be increased, and the conductivity of the material can be enhanced; the hydrogen evolution reaction of the material is reduced through bismuth trioxide surface modification, and finally the zinc-nickel secondary battery negative electrode material with high specific capacity and long cycle life is obtained. The generated composite material has a core-shell structure, and shows very excellent electrochemical performance at the same time. When the material is used as a negative electrode material of a zinc-nickel secondary battery, the specific discharge capacity of the material can still reach 559.3 mAh g <-1 > after 100 times of charge and discharge cycles under the current density of 0.5 C.

Description

technical field [0001] The invention relates to the preparation of a bismuth trioxide modified indium-doped zinc oxide material and its application as a negative electrode of a zinc-nickel secondary battery, belonging to the fields of inorganic nanomaterials and electrochemistry. Background technique [0002] A zinc-nickel secondary battery is a secondary battery with zinc / zinc oxide as the negative electrode and nickel hydroxide / nickel oxyhydroxide as the positive electrode. It has the characteristics of high specific energy, good safety and low price. Based on the above advantages, zinc-nickel secondary batteries are expected to be used in the power supply and starting power supply of small electric vehicles in the future, and are also very likely to replace the current lead-acid batteries that use toxic lead compounds. Therefore, the research of zinc-nickel secondary battery and its electrode materials has attracted more and more people's attention. [0003] At present, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/62H01M4/48H01M10/30
CPCH01M4/48H01M4/628H01M4/626H01M10/30H01M2004/027Y02E60/10
Inventor 王二东张强孙公权
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products