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A method to improve the efficiency of flexible copper indium gallium selenide thin film solar cells

A solar cell and copper indium gallium selenide technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of harsh preparation conditions, high cost, and low photoelectric conversion efficiency

Active Publication Date: 2021-07-06
XINYANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems in the prior art that the preparation of CIGSe solar cells requires high-vacuum equipment and harsh preparation conditions, high cost, and low photoelectric conversion efficiency, the present invention provides a method for improving the efficiency of flexible copper indium gallium selenide thin film solar cells

Method used

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  • A method to improve the efficiency of flexible copper indium gallium selenide thin film solar cells
  • A method to improve the efficiency of flexible copper indium gallium selenide thin film solar cells
  • A method to improve the efficiency of flexible copper indium gallium selenide thin film solar cells

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Step A. Sputter molybdenum electrodes on a clean polyimide / stainless steel substrate: when the pressure of argon gas reaches 2Pa, turn on the DC sputtering power supply, adjust the power to 200W, pre-sputter for 5 minutes, and then remove the metal The baffle was sputtered on the substrate for 30 minutes, then the argon pressure in the cavity was adjusted to 1 Pa, the sputtering was performed for 30 minutes, and the power was turned off to obtain a molybdenum electrode with good density and bonding force.

[0031] Step B. Preparation of CIGSe precursor solution: First, weigh copper powder (0.0699g, 1.10mmol), indium powder (0.0960g, 0.83mmol), gallium powder (0.0250g, 0.35mmol), selenium powder (0.1812g, 2.29 mmol), bismuth chloride powder (0.0104g, 0.0456mmol) and potassium chloride powder (0.0034g, 0.0456mmol) were added to a 25mL Erlenmeyer flask; then 5mL of ethylenediamine and 5mL of ethanedithiol were added. Finally, the round-bottomed flask was sealed and placed ...

Embodiment 2

[0041] Step A. Sputter molybdenum electrodes on a clean polyimide / stainless steel substrate: when the pressure of argon gas reaches 3Pa, turn on the DC sputtering power supply, adjust the power to 250W, pre-sputter for 5 minutes, and then remove the metal The baffle is sputtered on the substrate for 60 minutes, and then the argon pressure in the cavity is adjusted to 0.1 Pa, the sputtering is performed for 60 minutes, the power is turned off, and a molybdenum electrode with good density and bonding force is obtained.

[0042] Step B. Preparation of CIGSe precursor solution: First, weigh copper nitrate (0.206g, 1.10mmol), indium nitrate (0.250g, 0.83mmol), gallium nitrate (0.0895g, 0.35mmol), selenium dioxide (0.2541g, 2.29mmol), bismuth nitrate powder (0.193g, 0.4mmol) and potassium hydroxide powder (0.0228g, 0.4mmol) were added to a 25mL conical flask; then 5mL ethylenediamine and 5mL ethanedithiol were added. Finally, the round-bottomed flask was sealed and placed on a heati...

Embodiment 3

[0050] The steps in this example are roughly similar to those in Example 1, and the similarities will not be repeated. The difference is that no bismuth chloride powder is added in step B.

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Abstract

The invention belongs to the field of solar cell preparation, and in particular relates to a method for improving the efficiency of a flexible copper indium gallium selenium thin film solar cell. The specific steps are as follows: first sputter the molybdenum electrode on the substrate, then prepare the CIGSe precursor solution, spin-coat the precursor solution on the substrate to prepare the CIGSe prefabricated film, heat and selenize annealing to obtain the CIGSe film; then prepare the CIGSe film on the CIGSe film cadmium sulfide thin film, then sequentially sputtering zinc oxide and indium-doped tin oxide thin films on the cadmium sulfide thin film, and finally performing silver electrode evaporation to obtain a flexible CIGSe thin film solar cell. By introducing bismuth and potassium compounds into the CIGSe precursor solution, the growth of CIGSe crystals is promoted, grain boundary defects are passivated, and the performance of CIGSe solar cells is improved. The invention is environmentally friendly, safe and low in cost, and effectively improves the efficiency of the CIGSe thin film solar cell.

Description

technical field [0001] The invention belongs to the field of solar cell preparation, and in particular relates to a method for improving the efficiency of a flexible copper indium gallium selenium thin film solar cell. Background technique [0002] Solar energy has the advantages of inexhaustibility, wide distribution, safety, and environmental protection. It is the most potential renewable energy. Solar cells are devices that directly convert solar energy into electrical energy, and have become the main research direction in the field of renewable energy around the world. At present, silicon solar cells have been widely used in people's production and life, such as large-scale power stations, distributed power stations, photovoltaic street lights, etc. Thick and inflexible, it cannot be applied to a wider range of people's lives. Flexible solar cells are easy to improve the mass specific power of solar cells, and compared with glass-encapsulated silicon solar cells, they ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032C23C14/08C23C14/16C23C14/20C23C14/24C23C14/34C23C14/35
CPCC23C14/086C23C14/16C23C14/165C23C14/20C23C14/205C23C14/24C23C14/34C23C14/35H01L31/0323H01L31/18Y02E10/541Y02P70/50
Inventor 肖振宇訾威程念高梦格刘文元李昱森吴月月孙书杰赵志强孙柱柱李彦磊房良刘江峰涂友超耿晓菊
Owner XINYANG NORMAL UNIVERSITY
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