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Image sensor pixel having a lateral doping profile formed with indium doping and its preparation method

A doping gradient and pixel technology, which is applied in the field of image sensors containing doped indium pixels, can solve the problems of no need for compensation of photodiodes, poor barrier and/or well performance, etc., and achieve the effect of improving image lag

Active Publication Date: 2009-09-30
OMNIVISION TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it has been found that the introduction of lateral gradient doping will lead to photodiode N - Compensation not required for implantation
While this lateral domain aids transmission through the transfer gate, this doping and the photosensitive element / transfer gate interface also does make barrier and / or well performance worse

Method used

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  • Image sensor pixel having a lateral doping profile formed with indium doping and its preparation method
  • Image sensor pixel having a lateral doping profile formed with indium doping and its preparation method
  • Image sensor pixel having a lateral doping profile formed with indium doping and its preparation method

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Embodiment Construction

[0034] In the following description, numerous specific details are provided in order to provide a thorough understanding of specific embodiments of the invention. One skilled in the art will recognize, however, that the invention can be practiced without one or more of these specific details, or that the invention can be practiced with other methods, elements, etc. In addition, well-known structures and operations are not shown or described in detail in order to clearly describe the various embodiments of the present invention.

[0035] In the description of the present invention, when referring to "an embodiment" or "a certain embodiment", it means that the specific features, structures or characteristics described in this embodiment are included in at least one embodiment of the present invention. Thus, appearances of "in an embodiment" or "in a certain embodiment" in various places in the specification do not necessarily refer to all belonging to the same embodiment; manne...

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Abstract

The invention discloses an active pixel. The transmission gate of the active pixel has a polysilicon gate circuit doped with indium. The active pixel of the present invention includes a photosensitive element located in the semiconductor base and an n-type floating node located in the semiconductor base. An n-channel transfer transistor with a transfer gate is formed between the photosensitive element and the floating node. The base body of the pixel according to the invention has a lateral doping gradient of indium dopant.

Description

technical field [0001] The present invention relates to image sensors, and more particularly, the present invention relates to an image sensor including indium-doped pixels. Background technique [0002] Image sensors have become ubiquitous, and they are widely used in digital cameras, cellular phones, security cameras, medical equipment, automobiles, and other applications. The technology of manufacturing image sensors, especially CMOS (Complementary Metal Oxide Semiconductor) image sensors continues to develop rapidly. For example, the requirements of high resolution and low power consumption promote the further miniaturization and integration of image sensors. [0003] Each pixel of an image sensor typically includes a photosensitive element, such as a photodiode, and one or more transistors that read out signals from the photosensitive element. For example, pass transistors are often employed in pixels of four-transistor (or more) designs. The transfer transistor has ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L31/0288H01L27/14643H01L27/14689H01L27/14609
Inventor 霍华德·E·罗德斯
Owner OMNIVISION TECH INC
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