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Electrode assembly and plasma processing apparatus

A technology of electrode assembly and plasma, applied in the direction of plasma, electrical components, circuits, etc., can solve the problems of increased number of parts, deterioration of maintainability, troublesome replacement operation, etc., to prevent the increase of number of parts and the loss of reliable energy , The effect of preventing electrode plate damage

Inactive Publication Date: 2007-03-14
TOKYO ELECTRON LTD
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Problems solved by technology

[0007] However, when the above-mentioned embedded parts are applied to a plasma processing apparatus, since there are many gas vent holes in the upper electrode plate, many embedded parts are required, and there is a problem that the number of parts increases.
[0008] In addition, since the embedded parts are consumed by the collision of ions, they must be replaced at predetermined replacement intervals. However, in the above-mentioned plasma processing apparatus, since a large number of embedded parts are required, the replacement operation is troublesome, and there is also a maintenance problem. worsening problem

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  • Electrode assembly and plasma processing apparatus
  • Electrode assembly and plasma processing apparatus
  • Electrode assembly and plasma processing apparatus

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Embodiment Construction

[0046] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0047] First, the plasma processing apparatus according to the first embodiment of the present invention will be described.

[0048] FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to the present embodiment.

[0049] In FIG. 1 , the plasma processing apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus, and has, for example, a cylindrical chamber 10 made of aluminum whose surface has been subjected to an aluminum oxide film treatment (anodizing treatment). (processing room). The process chamber 10 is securely grounded.

[0050] A cylindrical susceptor support 12 is arranged at the bottom of the chamber 10 with an insulating plate 11 such as ceramics interposed therebetween, and a susceptor 13 made of, for example, aluminum is arranged on the susceptor supp...

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Abstract

An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented so that a worsening of the ability to carry out maintenance can be prevented. An upper electrode assembly has an upper electrode plate 32 , a cooling plate (C / P) 34 and a spacer 37 interposed between the upper electrode plate 32 and the C / P 34. The upper electrode plate 32 has therein electrode plate gas-passing holes 32 a that penetrate through the upper electrode plate 32. The C / P 34 has therein C / P gas-passing holes 34 a that penetrate through the C / P 34. The spacer 37 has therein spacer gas-passing holes 37 a that penetrate through the spacer 37. The electrode plate gas-passing holes 32 a, C / P gas-passing holes 34 a and the spacer gas-passing holes 37 a are not disposed collinearly.

Description

technical field [0001] The present invention relates to an electrode assembly and a plasma processing apparatus, and more particularly, to an electrode assembly including an electrode plate having gas vent holes. Background technique [0002] Heretofore, a plasma processing apparatus for performing a desired plasma processing on a wafer for a semiconductor device as a substrate has been known. This plasma processing apparatus includes a processing chamber for accommodating wafers, and a mounting table (hereinafter referred to as a "susceptor") on which the wafer is placed and functioning as a lower electrode, and an upper electrode facing the susceptor are arranged in the processing chamber. In addition, at least one of the mounting table and the upper electrode is connected to a high-frequency power source, and the mounting table and the upper electrode apply high-frequency power to the internal space of the processing chamber. [0003] In this plasma processing apparatus,...

Claims

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Application Information

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IPC IPC(8): H05H1/24H05H1/46H01L21/00
Inventor 高桥千香子铃木隆司堀口将人
Owner TOKYO ELECTRON LTD