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Epitaxial wafer for led and light emitting diode

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low brightness, and achieve the effect of high yield and high light extraction efficiency

Inactive Publication Date: 2007-04-04
HITACHI CABLE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, GaAsP and GaP are used as LEDs with shorter wavelengths than red, but only low-luminance LEDs can be obtained

Method used

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  • Epitaxial wafer for led and light emitting diode
  • Epitaxial wafer for led and light emitting diode

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Experimental program
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Effect test

no. 1 approach

[0032] FIG. 1 shows a light emitting diode according to a first embodiment of the present invention. For the epitaxial wafer for light emitting diodes, on the n-type GaAs substrate 2, the n-type AlGaInP cladding layer 3, the AlGaInP active layer 4 and the p-type AlGaInP cladding layer 5 are sequentially grown by MOVPE method, and the p-type AlGaInP cladding layer 5, a p-type GaP current diffusion layer 6 doped with Mg is grown by MOVPE.

[0033] In addition, in a light emitting diode produced using this epitaxial wafer for light emitting diodes, the back surface electrode 1 is formed on the entire back surface of the substrate 2, and a circular surface electrode 7 is formed in the center on the p-type current diffusion layer 6, for example. A laminated electrode such as AuGe / Ni / Au can be used as the back electrode 1 , and a laminated electrode such as AuZn / Ni / Au or Ti / Pt / Au can be used as the surface electrode 7 .

[0034] To form the p-type GaP current spreading layer 6 dope...

no. 2 approach

[0044] Next, a second embodiment of the present invention will be described. The p-type GaP current diffusion layer 6 of this second embodiment has a predetermined surface roughness by doping with Mg and C, and the other configurations are the same as those of the first embodiment.

[0045] To form the Mg-doped p-type GaP current spreading layer 6, trimethylgallium (Ga(CH 3 ) 3 ) and / or triethylgallium (Ga(C 2 h5 ) 3 ), with the V / III ratio (1~100) for epitaxial growth, at this time, the concentration of doping atoms is greater than or equal to 1×10 17 cm -3 Mg and C. Thus, the surface roughness of the P-type GaP current diffusion layer 6 is Rms equal to or greater than 20 nm.

[0046] According to this second embodiment, since the surface roughness of the p-type GaP current diffusion layer 6 can be made larger than that of the first embodiment, light extraction efficiency can be improved, and a light emitting diode with higher brightness and an epitaxial wafer for light...

Embodiment 1

[0048] Next, Embodiment 1 of the present invention will be described. The light emitting diode of this Example 1 corresponds to the light emitting diode of the above-mentioned first embodiment, and is manufactured as follows.

[0049] First, on the n-type GaAs substrate 2, a carrier concentration of 1×10 18 cm -3 n-type AlGaInP cladding layer 3, non-doped AlGaInP active layer 4 with a thickness of 0.5 μm, and a carrier concentration of 5×10 with a thickness of 0.5 μm 17 cm -3 p-type AlGaInP cladding layer 5 .

[0050] Next, on the p-type AlGaInP cladding layer 5, a layer with a thickness of 10 μm and a carrier concentration of 1×10 was grown by the MOVPE method. 18 cm -3 Mg doped GaP current spreading layer 6 .

[0051] The GaP current diffusion layer 6 is passed through the flow of phosphine (PH 3 ), 50cc / min trimethylgallium (TMG: (CH 3 ) 3 Ga), 200cc / min of biscyclopentadienyl magnesium (Cp2Mg) and 20L / min of H 2 formed by the carrier gas.

[0052] (evaluate)

...

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Abstract

The present invention relates to an epitaxial wafer for a light emitting diode which has a high productivity and high light emitting efficiency without performing an additional process after epitaxial growth and a light emitting diode. In the epitaxial growth process of the epitaxial wafer for a light emitting diode, an n-type AlGaInP cladding layer 3, an AlGaInP active layer 4, and a p-type AlGaInP cladding layer 5, are grown on an n-type GaAs substrate 2 by MOVPE method in order; a p-type GaP current diffusion layer 6 containing Mg as a dopant is grown on the p-type AlGaInP cladding layer 5 by MOVPE method; and the surface of the p-type GaP current diffusion layer 6 is roughened to increase the light emitting efficiency.

Description

technical field [0001] The invention relates to an epitaxial wafer for a high-brightness light-emitting diode and a light-emitting diode. Background technique [0002] Light-emitting diodes (LEDs) are widely used as display elements for industrial and consumer use, and AlGaAs red LEDs are used as high-brightness LEDs. In addition, GaAsP and GaP were used as LEDs with shorter wavelengths than red, but only low-luminance LEDs were obtained. [0003] However, in recent years, since an AlGaInP-based crystal layer can be grown by metal organic vapor phase epitaxy (MOVPE), orange, yellow, and green high-brightness LEDs can be produced (for example, refer to Patent Document 1). [0004] In the light-emitting diode described in Patent Document 1, an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, an AlGaInP active layer, a p-type AlGaInP cladding layer, and a Zn-doped A diode obtained from a p-type GaP current diffusion layer. According to this light emitting diode, c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/30
CPCH01L33/22H01L33/30H01L33/14
Inventor 加古学谷毅彦
Owner HITACHI CABLE
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