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High voltage switch using low voltage CMOS transistors

A technology of electric switches and switching elements, which is applied in the direction of transistors, electronic switches, semiconductor devices, etc., and can solve the problems of limited use

Inactive Publication Date: 2007-05-09
KONINK PHILIPS ELECTRONICS NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the CMOS switches described still suffer from a limited input voltage range, so for many applications the practical use of such CMOS switches is still very limited

Method used

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  • High voltage switch using low voltage CMOS transistors
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  • High voltage switch using low voltage CMOS transistors

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Experimental program
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Embodiment Construction

[0023] Figure 1 illustrates the two above-mentioned prior art solutions to the limited voltage range problem of CMOS switches.

[0024] The upper part of Fig. 1 shows a standard CMOS complementary switch with supply voltage VCC. Typically, the switches are limited to input and output voltages in the VCC range, ie typically 5V or less. A high voltage version of the switch can be obtained by adding the option of a thick gate oxide and (if required) the option of a high voltage p / n well. However, this would increase the cost and complexity of the manufacturing process, so that this solution is not suitable for cost-effective mass production.

[0025] The lower part of FIG. 1 shows a CMOS switch with a bootstrap circuit and a graph illustrating the supply voltage VCC together with the voltages VL and VH and the voltage on the input denoted "i". Dashed lines indicate optional input buffers. In the lower circuit of Fig. 1, breakdown limitation is avoided by bootstrapping the gate...

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Abstract

The invention relates to an electronic switch capable of rail-to-rail input voltage swing exceeding the voltage rating for a certain technology in which the switch element of the switch is implemented. For example the switch element could be a complementary coupled pair of nMOS and pMOS transistors in a CMOS technology. Two voltage dividers are used to provide a floating supply voltage to the switch element from the supply voltage. This floating supply voltage is always within the supply voltage independent from the input voltage thus allowing a rail-to-rail voltage at the input terminal of the switch while keeping the floating supply voltage within the critical breakdown voltage for the switch element. A switch according to the invention may be formed in standard CMOS technology and it can be implemented to function at switching frequencies up to at least 50 MHz. The switch elements according to the invention can be cascaded thus obtaining an even higher maximum differential input-output voltage than with one switch.

Description

technical field [0001] The present invention relates to the field of electronic switches, more particularly it relates to electronic switches suitable for implementation within the CMOS process. In particular, the invention relates to the field of electronic CMOS switches accepting at their terminals exceeding the maximum gate oxide and / or junction breakdown voltages associated with CMOS processes. Background technique [0002] Electronic on / off switches are used in a large number of electronic devices and applications. For example, CMOS complementary floating switches are widely used due to the many advantages offered by CMOS processes compared to other implementations. However, CMOS processes suffer from an inherent maximum gate oxide and / or junction breakdown voltage that typically limits the operable terminal voltage range of a CMOS circuit. In modern processes, this typically limits the usable terminal voltage range to 5V or even less, thus forming a major barrier to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/0812G11C27/02H03K17/06H03K17/687
CPCH03K17/6872G11C27/02H03K17/063
Inventor J·G·斯尼普
Owner KONINK PHILIPS ELECTRONICS NV