Magnetron sputtering method and magnetron sputtering system
A magnetron sputtering and sputtering technology, which is applied in the direction of sputtering coating, discharge tube, ion implantation plating, etc., can solve the problems of film quality deterioration, and achieve the prevention of deposition, abnormal discharge, and target material deposition effect
Active Publication Date: 2007-05-16
ULVAC INC
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Problems solved by technology
[0006] However, in the above-mentioned prior art, the shield 110 arranged between the targets 107 absorbs plasma during film formation, leaving a non-etched non-etched region in the vicinity of the shield 110 of each target 107.
[0007] Moreover, due to the existence of the non-corrosion area, an abnormal discharge is generated on the surface of the target 107, or the target material is deposited in the non-corrosion area, resulting in deterioration of the film quality.
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[0068] Hereinafter, examples of the present invention will be described.
[0069] Example
[0070] Using the magnetron sputtering device shown in Figure 1, six In 2 o 3 Added with 10 wt% SnO 2 target.
[0071] And, introduce Ar and O into the vacuum chamber 2 The constituted sputtering gas was sputtered by applying a pulse-shaped rectangular wave (frequency: 50 Hz, energized power: 6.0 kW) shown in FIG. 2 to each target under the condition of a pressure of 0.7 Pa.
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A magnetron sputtering method and a magnetron sputtering system are provided enable to significantly reduce abnormal discharge on the target surface and non-erosion regions causing deposition of a target material. The invention relates to a plurality of targets 8A, 8B, 8C, 8D arranged in the vacuum as to be electrically independent from one another, and sputtering is performed by generating magnetron discharge in the vicinity of the targets 8A, 8B, 8C, 8D. In the invention, at the time of sputtering, voltages having a phase difference of 180 DEG are applied alternately to adjacent targets 8A, 8B, 8C, 8D at a specified timing.
Description
technical field [0001] The present invention relates to a magnetron sputtering method and a magnetron sputtering device, in particular to a magnetron sputtering method and a magnetron sputtering device with a plurality of targets in a vacuum chamber. Background technique [0002] Conventionally, as such a magnetron sputtering apparatus, the magnetron sputtering apparatus shown in FIG. 6 is known, for example. [0003] As shown in FIG. 6, the magnetron sputtering apparatus 101 has a predetermined vacuum exhaust system 103 and a vacuum chamber 102 connected to a gas introduction pipe 104, and the vacuum chamber 102 as a film-forming object is arranged in the upper part of the vacuum chamber 102. Substrate 106. [0004] A plurality of targets 107 each having a magnetic circuit forming portion 105 is arranged in a lower portion of the vacuum chamber 102 , and a predetermined voltage is applied to each target 107 from a power source 109 via a back plate 108 . [0005] In additi...
Claims
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Login to View More IPC IPC(8): C23C14/35H01J37/34
CPCC23C14/352H01J37/3408H01J37/32
Inventor 太田淳田口信一郎杉浦功谷典明新井真清田淳也
Owner ULVAC INC