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Semiconductor memory device

A storage device, semiconductor technology, applied in information storage, static memory, digital memory information and other directions, can solve problems such as adverse effects of power consumption

Inactive Publication Date: 2007-05-23
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Therefore, this has an adverse effect on power consumption, which presents a huge burden on the mobile storage device

Method used

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  • Semiconductor memory device
  • Semiconductor memory device
  • Semiconductor memory device

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Embodiment Construction

[0029] A semiconductor memory device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0030] FIG. 3 is a block diagram of an I / O line sense amplifier of a semiconductor memory device according to an embodiment of the present invention.

[0031] 3, first a first-stage sense amplifier 130 reads and amplifies the data of the local I / O lines LIO and LIOB, and secondly a second-stage sense amplifier 140 reads and amplifies the first-stage sense amplifier 130 The output signals D0 and D0B. A global I / O driver 150 outputs data to the global I / O lines in response to the output signals D1 and D1B of the second stage sense amplifier 140 . A first control signal generator 160 receives a column pulse signal Y, and outputs a first control signal IOSTB1 to the first-stage sense amplifier 130 . A second control signal generator 170 responds to the column pulse signal Y, and outputs a second control sign...

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Abstract

A semiconductor memory device includes an I / O line, a first sense amplifier connected to the first I / O line to amplify a signal applied on the first I / O line in response to a first control signal, a second sense amplifier for amplifying an output signal of the first sense amplifier in response to a second control signal, and a disabling unit for disabling the first control signal in response to an output signal of the second sense amplifier.

Description

technical field [0001] The present invention relates to a semiconductor memory device, and more particularly, the present invention relates to an I / O line sense amplifier for sensing and amplifying data of an I / O line. Background technique [0002] Generally, semiconductor memory devices transfer data using input / output (I / O) lines. An I / O data line used for data transfer between a data I / O pad and a cell area or a core area is called a global data line (GIO). Global data lines (GIOs) are globally arranged across multiple groups. One output of the bit line sense amplifier is passed to the global data line via a local data line (LIO). [0003] What is needed is a circuit for transferring data between global data lines and local data lines. In the case of DRAM, an I / O sense amplifier (IOSA) is used to transfer data from the local data lines to the global data lines during a read operation. In a write operation, a write driver is used to transfer data from the global data l...

Claims

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Application Information

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IPC IPC(8): G11C7/06
CPCG11C7/08G11C7/10G11C11/4091G11C11/4096
Inventor 河成周
Owner SK HYNIX INC