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Bitune governed approach for program control of non-volatile memory

A non-volatile storage, non-volatile technology, applied in the field of programming non-volatile memory

Active Publication Date: 2007-05-30
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a consumer demand for memory devices that can be programmed as quickly as possible

Method used

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  • Bitune governed approach for program control of non-volatile memory
  • Bitune governed approach for program control of non-volatile memory
  • Bitune governed approach for program control of non-volatile memory

Examples

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Embodiment Construction

[0041] The invention is illustrated by way of example and not limitation in the various figures of the accompanying drawings, like references denoting like elements throughout the drawings. It should be noted that references in this disclosure to one or one embodiment are not necessarily to the same embodiment, and such references mean at least one.

[0042] In the following description, various aspects of the invention will be described. However, one skilled in the art will appreciate that the present invention may be practiced with only some or all of the aspects of the disclosure. For purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the invention. However, it will be understood by one skilled in the art that the present invention may be practiced without all of these specific details. In other instances, well-known features were omitted or simplified in order not to obscure the invention....

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Abstract

In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage element. A first program voltage is applied to the first non-volatile storage element. For example, a program pulse is applied to a control gate for the first non-volatile storage element. During the program pulse, the bit line is changed from said first voltage to a second voltage, where the second voltage allows the first non-volatile storage element to be programmed.

Description

[0001] Cross References to Related Applications [0002] The following applications are cross-referenced and incorporated herein by reference in their entirety: [0003] U.S. Patent Application No. 10 / 839,764 by Daniel C. Guterman, Nima Mokhlesi, and Yupin Fong, entitled BOOSTING TO CONTROL PROGRAMMIMG OF NON-VOLATILE MEMORY, filed on the same date as this application [Attorney Docket No. SAND-01028US0]. technical field [0004] The present invention relates to techniques for programming non-volatile memory. Background technique [0005] Semiconductor memory devices have become more popular for use in various electronic devices. For example, non-volatile semiconductor memory is used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, and other devices. Electrically Erasable Programmable Read Only Memory (EEPROM) and flash memory are among the most popular non-volatile semiconductor memories. [0006...

Claims

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Application Information

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IPC IPC(8): G11C16/10G11C11/56G11C16/04G11C11/34G11C16/12G11C16/30G11C16/34
CPCG11C16/3454G11C16/30G11C16/12G11C16/0483G11C16/3459
Inventor 丹尼尔·C·古特曼尼玛·穆赫莱斯方玉品
Owner SANDISK TECH LLC
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