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Built-in type self-test starting method and system

A test system and built-in technology, applied in static memory, instrument, etc., can solve the problems of high integration cost and large storage device size

Active Publication Date: 2010-05-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] As the size of the storage device gradually increases, the size of the error code storage device may be very large
Especially when the defect density (defect density) is high, the storage capacity is large, or there are multiple memories to be tested, the integration cost of the BIST module 102 itself may be very expensive

Method used

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  • Built-in type self-test starting method and system
  • Built-in type self-test starting method and system
  • Built-in type self-test starting method and system

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Embodiment

[0021] The present invention provides a method and system for using a part of the memory module to be tested as a storage device, so that there is no need to install any additional storage device suitable for built-in self-test, so the device area can be saved, wherein the storage device Used to store test information. The system also includes a test circuit, and the circuit to be tested is electrically coupled to the test circuit. The circuit under test includes at least one memory block and / or at least one logic circuit block. A memory block includes volatile memory as well as nonvolatile memory. Several well-known memory types include static random access memory (Static Random Access Memory, SRAM), dynamic random access memory, electronic fuse (electrical fuse), read-only memory, programmable read-only memory, erasable programmable Read-only memory, Electrically Erasable Programmable Read-Only Memory (EEPROM), flash memory, multilevel nonvolatile memory, ferroelectric mem...

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Abstract

A method and system is disclosed for conducting built-in-self-test (BIST) in a circuit under test. After allocating at least one memory segment with a predetermined size in at least one memory moduleas a test result module, the built-in-self-test is conducted for the circuit under test without testing the test result module. The test results are stored in the test result module.

Description

technical field [0001] The present invention relates to a memory test, in particular to an improved memory built-in self-test (Memory built-In Self Test, MBIST) design or logic built-in self-test (Logic built-In Self Test, LBIST) )design. Background technique [0002] The memory chip is an integrated circuit (IC) composed of millions of transistors and capacitors. There are many types of memory devices in today's business world. Several well-known memory types include read-only memory (Read-Only Memory, ROM), programmable read-only memory (Programmable Read-Only Memory, PROM), erasable programmable read-only memory (Erasable Programmable Read-Only Memory) , EPROM) and flash memory (Flash Memory). While each type of memory has unique characteristics, all of the above memories store nonvolatile data in common. That is, when the power goes out, the data stored in the memory will not be lost. The data stored in these chips cannot be changed, or the data stored in these chip...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/12
CPCG11C29/44G11C2029/1208
Inventor 庄建祥
Owner TAIWAN SEMICON MFG CO LTD