Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronic device

A technology for electronic components and manufacturing methods, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc. Effect

Inactive Publication Date: 2007-06-13
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] After the gold layer is formed by electroplating, it is necessary to perform etching and cleaning processes separately, resulting in a decrease in manufacturing efficiency

Method used

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  • Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronic device
  • Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronic device
  • Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit board, and electronic device

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Embodiment Construction

[0060] Embodiments of a semiconductor device, a method of manufacturing a semiconductor device, an electronic component, a circuit board, and an electronic device according to the present invention will be described below with reference to FIGS. 1 to 7 .

[0061] [semiconductor device]

[0062] 1 and 2 are diagrams showing an embodiment of a semiconductor device of the present invention. In these figures, reference numeral 1 is a semiconductor device having a wafer-level CSP (W-CSP) structure.

[0063] In addition, the side sectional view of FIG. 1 is a sectional view along the line A-A in the schematic diagram of FIG. 2 .

[0064] As shown in FIG. 1 , a semiconductor device 1 includes a silicon substrate (semiconductor substrate) 10 , first electrodes 11 , external connection terminals 12 , and connection terminals 13 .

[0065] Here, an integrated circuit (not shown) including semiconductor elements such as transistors and memory elements is formed on a silicon substrate (...

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Abstract

A semiconductor device, includes: a semiconductor substrate having an active face; a first electrode provided on or above the active face of the semiconductor substrate; an external connection terminal electrically connected to the first electrode and provided on or above the active face of the semiconductor substrate; and a connection terminal provided on or above the active face of the semiconductor substrate, wherein any of a gold plated film, a silver plated film, and a palladium plated film is formed on at least one of the external connection terminal and the connection terminal.

Description

technical field [0001] The present invention relates to a semiconductor device, a method of manufacturing the semiconductor device, an electronic component, a circuit board, and an electronic device. Background technique [0002] In order to mount semiconductor devices more densely, bare chip mounting is an ideal mounting method. [0003] However, bare chips have problems of difficulty in ensuring quality and troublesome handling. [0004] Therefore, conventionally, a semiconductor device to which CSP (Chip Scale / Size Package) is applied has been developed. [0005] In addition, especially in recent years, as described in Japanese Re-Explication No. 01 / 071805 and JP-A No. 2004-165415, the so-called "wafer-level CSP (W-CSP)" that forms CSP at the wafer level has been introduced. attention. [0006] In wafer-level CSP, a plurality of rewired semiconductor elements (integrated circuits) are formed in units of wafers, and then the wafer is cut to separate the plurality of sem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485H01L21/60H01L21/28
CPCH01L2924/01074H01L2924/01006H01L2924/01004H01L2924/01075H01L2924/01002H01L2924/01082H01L2924/01046H01L2924/04941H01L2924/01015H01L2924/01022H01L2924/01005H01L2924/01033H01L2924/01047H01L23/3114H01L2924/01079H01L24/13H01L2924/01013H01L2924/014H01L2924/14H01L2224/13099H01L2924/01078H01L2924/1461H01L2924/01023H01L2924/19043H01L24/10H01L2924/01029H01L2924/01024H01L24/02H01L24/03H01L24/05H01L2224/0236H01L2224/02377H01L2224/05001H01L2224/05008H01L2224/05022H01L2224/05024H01L2224/05124H01L2224/05139H01L2224/05144H01L2224/05147H01L2224/05155H01L2224/05164H01L2224/05166H01L2224/05171H01L2224/05184H01L2224/05548H01L2224/05569H01L2224/05571H01L2224/05639H01L2224/05664H01L2224/06131H01L2224/13H01L2224/13024H01L2924/00H01L2924/00014H01L23/48
Inventor 桥元伸晃
Owner SEIKO EPSON CORP
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