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Method of manufacturing semiconductor device

a semiconductor device and manufacturing method technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of degrading the operation characteristics of the semiconductor devi

Active Publication Date: 2022-09-27
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enhances the operational reliability and reduces power consumption of semiconductor devices by improving integration density and preventing over verify failures, thereby addressing the limitations of scaling down semiconductor devices.

Problems solved by technology

However, the size reduction of the MOSFETs may cause a short channel effect, or the like, resulting in a degradation of operation characteristics of the semiconductor device.

Method used

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  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device

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Embodiment Construction

[0015]Specific structural or functional descriptions of embodiments according to the concept which are disclosed in the present specification or application are illustrated only to describe the embodiments according to the concept of the present disclosure. The embodiments according to the concept of the present disclosure may be carried out in various forms and should not be construed as limited to the embodiments described in the present specification or application.

[0016]It will be understood that although the terms “first”, “second”, “third” etc. are used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element in some embodiments could be termed a second element in other embodiments without departing from the teachings of the present disclosure.

[0017]Further, it will be understood that when an element is referred to as being “connected” or “coupled” ...

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Abstract

The present technology provides a method of manufacturing a semiconductor device. The method includes forming a preliminary source structure, forming a stack structure on the preliminary source structure, the stack structure including a first material layer and a second material layer, forming a preliminary memory layer that penetrates the stack structure, forming a trench passing through the stack structure, forming a first buffer pattern by performing a surface treatment on a portion of the second material layer that is exposed by the trench, and forming a protective layer covering the first buffer pattern.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. § 119(a) to Korean patent application number 10-2020-0068100 filed on Jun. 5, 2020, in the Korean Intellectual Property Office, the entire disclosure of which is incorporated by reference herein.BACKGROUND1. Technical Field[0002]The present disclosure relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a three-dimensional semiconductor device.2. Related Art[0003]A semiconductor device includes an integrated circuit configured of a metal oxide semiconductor field effect transistor (MOSFET). As the size and design rule of the semiconductor device are gradually reduced, the scaling down of the MOSFETs is also gradually accelerating.[0004]However, the size reduction of the MOSFETs may cause a short channel effect, or the like, resulting in a degradation of operation characteristics of the semiconductor device. Accordingly, vario...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L27/11556H01L29/66H01L29/78H01L27/11582H10B43/35H10B41/27H10B41/35H10B43/27H10B43/30
CPCH01L27/11556H01L27/11582H01L29/66666H01L29/7827H10B41/35H10B41/27H10B43/35H10B43/27H10B43/10H01L21/76877H01L21/76802H10B43/30
Inventor HEO, MIN YOUNG
Owner SK HYNIX INC