Electrically programmable polysilicon fuse with multiple level resistance and programming

Abstract

A method to form a programmable resistor device in an integrated circuit device is achieved. The method comprises depositing a semiconductor layer overlying a substrate. The semiconductor layer is patterned to form a plurality of lines. The lines are electrically parallel between a first terminal and a second terminal. Any of the lines may be blown open by a current forced from the first terminal to the second terminal. A metal-semiconductor alloy is selectively formed overlying a first group of the lines but not overlying a second group of the lines. A method to program the programmable resistor device is described.

Description

BACKGROUND OF THE INVENTION [0001] (1) Field of the Invention [0002] The invention relates to an on-chip fuse device, and, more particularly, to an electrically programmable, polysilicon fuse with multiple level resistance. [0003] (2) Description of the Prior Art [0004] In the art of integrated circuits, many methods are used to provide manufacturing flexibility. Of particular importance are techniques that allow a common circuit design to be easily configured to specific applications or to parametric requirements with little or no effect on the manufacturing process. An example of a configuration method is the use of on-chip programmable fuses. A fuse is a conductive element that can be made into an open circuit. When the element is a conductor, the circuit operates according to a first configuration. When the element is open circuit, the circuit operates according to a second configuration. A typical prior art, on-chip fuse is simply a metal line. A metal line can be made an open ...

Images