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Plating apparatus, plating method, and manufacturing method of semiconductor device

a manufacturing method and semiconductor technology, applied in semiconductor devices, electrolytic processes, electrolysis components, etc., can solve the problems of difficult to form the plating film uniformly

Inactive Publication Date: 2005-07-07
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009] According to an aspect of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically-connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by said holder, is provided.
[0010] According to another aspect of the present invention, a plating method, including: electrically connecting a first anode to a seed layer of a substrate, wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer; wetting the substrate in the plating solution; a

Problems solved by technology

However, in the former case, the wafer is tilted to be immersed in the plating solution while applying a voltage thereto, so the amounts of plating film to be formed are different between the early wetted portion and the later wetted portion, and thus there is a problem that it is difficult to form the plating film uniformly.
In the latter case, the reference electrode is disposed in the vicinity of the wafer, so an electric field is disturbed by the reference electrode at the time of plating, and thus there is a problem that it is difficult to form the plating film uniformly.

Method used

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  • Plating apparatus, plating method, and manufacturing method of semiconductor device
  • Plating apparatus, plating method, and manufacturing method of semiconductor device
  • Plating apparatus, plating method, and manufacturing method of semiconductor device

Examples

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first embodiment

[0018] Hereinafter, a first embodiment will be described. FIG. 1 is a schematic vertical cross-sectional view of a plating apparatus according to the present embodiment, and FIG. 2 is a schematic vertical cross-sectional view of a wafer according to the present embodiment.

[0019] As shown in FIG. 1, a plating apparatus 1 is composed of a plating solution tank 2, and so on, formed in a cylindrical shape. The plating solution tank 2 is for storing a plating solution whose main constituent is an electrolytic solution, for example, such as aqueous copper-sulfate solution.

[0020] A holder 3 to hold a wafer W (substrate) is disposed above the plating solution tank 2. The holder 3 holds the wafer W in a so-called facedown manner so that a surface to be plated of the wafer W faces downward.

[0021] The holder 3 is composed of a holder main body 3A and so on, for housing the wafer W inside thereof substantially horizontally. A lower surface of the holder main body 3A opens so that the surface...

example

[0041] Hereinafter, an example will be explained. In the present examples a filled status of a plating is observed.

[0042] In the present example, a plating 7 apparatus described in the above first embodiment is used. A plating solution whose main constituent is aqueous copper sulfate solution is used, and a sacrificial anode composed of Zn is used. Besides, a wafer which is formed as follows is used. An oxide film of 100 nm thickness is formed on an Si substrate by a thermal oxidation, and thereafter an interlayer insulation film of approximately 1 μm thickness is formed on the oxide film by using a Chemical Vapor Deposition (CVD) method. Further, wiring trenches having 0.09 μm width and 300 nm depth are formed on the interlayer insulation film by Photo Engraving Process (PEP) and etching. After that, a barrier metal layer of 15 nm thickness composed of Ta is formed by using a sputtering method on the interlayer insulation film, and a seed layer of 80 nm thickness composed of Cu is...

second embodiment

[0051] Hereinafter, a second embodiment will be described. In the present embodiment, the case when a sacrificial anode formed of carbon is used is explained. FIG. 6 shows a schematic vertical cross-sectional view of a plating apparatus according to the present embodiment.

[0052] As it is the same as the first embodiment, a sacrificial anode 7 is disposed in a plating solution tank 2. The sacrificial anode 7 of the present embodiment is composed of carbon. Here, in the case when the sacrificial anode 7 composed of carbon is used, the sacrificial anode 7 is hardly dissolved even when a wafer W is immersed in a plating solution while a seed layer 103 and the sacrificial anode 7 are in an electrically connected status. Accordingly, when the sacrificial anode 7 composed of carbon is used, a partition wall 8 can be removed as shown in FIG. 6 because the dissolved sacrificial anode 7 does not disturb the plating to the wafer W.

[0053] The present invention is not limited to the contents d...

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Abstract

According to an embodiment of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by holder, is provided.

Description

CROSS-REFERENCE TO THE INVENTION [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2003-401773, filed on Dec. 1, 2003; the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to, a plating apparatus and a plating method which applies plating on a substrate, and a manufacturing method of a semiconductor device. [0004] 2. Description of the Related Art [0005] In recent years, improvement in operating speed of a semiconductor device is required to achieve high integration density and high function of the device. Accordingly, wiring to connect each element becomes finer and multilayered. At present, to correspond to this finer and multilayered wiring, wiring is formed by filling Cu in via holes and wiring trenches formed on an interlayer insulation film, and then removing unnecessary Cu. [0006] Currently, an el...

Claims

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Application Information

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IPC IPC(8): C25D5/02C25D5/18C25D7/12C25D17/00C25D17/10C25D21/00H01L21/00H01L21/288H01L21/768
CPCC25D17/10C25D21/00H01L21/2885C25D17/002C25D7/123C25D17/001H01L21/76877
Inventor TOYODA, HIROSHIMATSUI, YOSHITAKAYAHIRO, KAZUYUKIYAMABE, JUNSEIMISHIMA, SHIRONAGAMATSU, TAKAHITO
Owner KK TOSHIBA