Method for shaping thin films in the near-edge regions of in-process semiconductor substrates
a technology of semiconductor substrates and near edges, which is applied in the direction of electrical equipment, decorative arts, electric discharge tubes, etc., can solve the problems of large volume of hazardous waste, killer defects, and time-consuming and expensive traditional ebr methods
Inactive Publication Date: 2005-09-22
ACCRETECH USA
View PDF38 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
"The invention is an apparatus and method for shaping a thin film on a wafer by using plasma sources to generate a flow of reactive gas and a channel to direct the gas towards the edge of the wafer. The apparatus includes a housing with a slot for holding the wafer, a plasma source, and an exhaust channel. The method involves mounting the wafer on a rotatable chuck, directing a flow of diluent / quenching gas onto the wafer, exhausting the gas, directing a flow of reactive gas towards the wafer, and rotating the wafer to remove film fragments. The apparatus and method can be used for both etching and deposition of films on wafers."
Problems solved by technology
Contamination problems originating in these edge areas are the result of poorly adhering films that partially delaminate and break loose from the surface.
These loose film fragments, or flakes, if they migrate towards the center of the wafer where active devices are being constructed, can become killer defects.
There is also a problem with existing remedies (Edge Bead Removal or EBR) for the flaking films.
Traditional EBR methods are time consuming and expensive.
Additionally, these EBR processes produce large volumes of hazardous waste.
Finally, EBR processes yield topography near the edge that is not readily cleanable and traps particles.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0037] The following description of the preferred embodiment(s) is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
[0038] Referring to FIGS. 1a to 1f, a previously known technique for edge bead removal (E.B.R.) frequently results in topography near the edge of a wafer 10 that is not readably cleanable and that traps particles.
[0039] In accordance with the prior art technique, the wafer 10 is provided with a thin film coating 11 of any suitable material. As indicated, fragment flakes 12 may break away in the form of thin film flakes. Subsequently, as indicated in FIG. 1b, a photoresist coating 13 is applied. After the photoresist coating 13 is exposed using conventional techniques, as indicated in FIG. 1c, and subsequently developed as indicated in FIG. 1d, the coating 11 and flakes 12 at the peripheral edge of the wafer 10 are again uncovered. A wet or dry thin film etch step may then be carried out to remove the coating 11 and...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| shape | aaaaa | aaaaa |
| pressure | aaaaa | aaaaa |
Login to View More
Abstract
A method for shaping and / or encapsulating near-edge regions of a substrate wafer is described. A housing provides channels for flowing a reactive gas towards the wafer edge. The reactive gas is directed towards the wafer edge for removing or depositing a thin film on the wafer edge. Gasses are exhausted downstream from the flow of the reactive gas. A second channel in the housing directs a flow of diluent / quenching gas onto the wafer for exhausting of the diluent / quenching gas and the reactive gas away from the wafer. The method may also provide a sequence of process steps, for example, selectively etching of a material on the wafer, etching of second material on the wafer and depositing an encapsulating material layer on the wafer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional of U.S. patent application Ser. No. 10 / 401,074 filed on Mar. 27, 2003, which claims the benefit of Provisional Application 60 / 376,154, filed Apr. 26, 2002. The disclosures of the above applications are incorporated herein by reference.FIELD OF THE INVENTION [0002] This invention relates to a method and apparatus for shaping thin films on in-process semiconductor substrates. More particularly, this invention relates to a method and apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates employing plasma techniques. BACKGROUND [0003] Future trends in integrated circuit (IC) manufacturing processes require manufacturing engineers to become more attentive to the root causes of contamination. An emerging awareness, within the IC manufacturing engineering community, has recognized the substrate's edge exclusion area and edge surfaces as source locations of contamination...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/3065H01L21/00H01L21/31H01L21/311H01L21/316
CPCH01J37/32366H01L21/31116H01L21/6708H01L21/67069H01L21/31612H01L21/02164H01L21/02271H01L21/67017H01L21/687
Inventor ROBBINS, MICHAEL D.
Owner ACCRETECH USA