Concentric proximity processing head

Abstract

In one of the many embodiments, a method for processing a substrate is disclosed which includes generating a first fluid meniscus and a second fluid meniscus at least partially surrounding the first fluid meniscus wherein the first fluid meniscus and the second fluid meniscus are generated on a surface of the substrate.

Description

CROSS REFERENCE To RELATED APPLICATION [0001] This is a continuation-in-part of a co-pending U.S. patent application Ser. No. 10 / 404,692, filed on Mar. 31, 2003, from which priority under 35 U.S.C. § 120 is claimed, entitled “Methods and Systems for Processing a Substrate Using a Dynamic Liquid Meniscus” which is a continuation-in-part of U.S. patent application Ser. No. 10 / 330,843 filed on Dec. 24, 2002 and entitled “Meniscus, Vacuum, IPA Vapor, Drying Manifold,” which is a continuation-in-part of U.S. patent application Ser. No. 10 / 261,839 filed on Sep. 30, 2002 and entitled “Method and Apparatus for Drying Semiconductor Wafer Surfaces Using a Plurality of Inlets and Outlets Held in Close Proximity to the Wafer Surfaces.” The aforementioned patent applications are hereby incorporated by reference in their entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to semiconductor wafer processing and, more particularly, to apparatuse...

AI Technical Summary

Benefits of technology

[0014] In another embodiment, an apparatus for processing a substrate is provided which includes a proximity head capable of generating a first fluid meniscus on a substrate surface and capable of generating a second fluid meniscus on the substrate surface at least partially surrounding the first fluid meniscus. The proximity head capable of substantially maintaining the integrity of the second fluid meniscus when in contact with the first fluid meniscus.

[0016] The advantages of the present invention are numerous. Most notably, the apparatuses and methods described herein utilize multi-menisci to efficiently process (e.g., clean, dry, etc.) substrates by operations which involve optimal management of fluid application and removal from the substrate while reducing unwanted fluids and contaminants remaining on a wafer surface. Consequently, wafer processing and production may be increased and higher wafer yields may be achieved due to efficient wafer processing.

[0017] The present invention enables optimal wafer processing through the generation and use of multiple fluid menisci with one meniscus at least partially surrounding another fluid meniscus. In one embodiment, concentric fluid inlets and outlets may be utilized which can generate a first fluid meniscus and a second fluid meniscus that is concentric to and surrounds the first fluid meniscus. In additional embodiments, any suitable number of menisci may be concentric to and / or surround each other.

Problems solved by technology

Unfortunately, this process tends to leave an accumulation of slurry particles and residues at the wafer surface.

If left on the wafer, the unwanted residual material and particles may cause, among other things, defects such as scratches on the wafer surface and inappropriate interactions between metallization features.

In some cases, such defects may cause devices on the wafer to become inoperable.

Unfortunately, if the moving liquid / gas interface breaks down, as often happens with all of the aforementioned drying methods, droplets form and evaporation occurs resulting in contaminants being left on the wafer surface.

As stated previously, if the moving liquid / gas interface 12 breaks down, droplets of the fluid form on the wafer and contamination may occur due to evaporation of the droplets.

Unfortunately, the present drying methods are only partially successful at the prevention of moving liquid interface breakdown.

In addition, the SRD process has difficulties with drying wafer surfaces that are hydrophobic.

Hydrophobic wafer surfaces can be difficult to dry because such surfaces repel water and water based (aqueous) cleaning solutions.

Therefore, because of the hydrophobic interactions and the surface tension, balls (or droplets) of aqueous cleaning fluid forms in an uncontrolled manner on the hydrophobic wafer surface.

This formation of droplets results in the harmful evaporation and the contamination discussed previously.

The limitations of the SRD are particularly severe at the center of the wafer, where centrifugal force acting on the droplets is the smallest.

Consequently, although the SRD process is presently the most common way of wafer drying, this method can have difficulties reducing formation of cleaning fluid droplets on the wafer surface especially when used on hydrophobic wafer surfaces.

This may lead to inconsistent wafer drying that can increase contamination levels and therefore decrease wafer production yields.

Such deposits as often occurs today reduce the yield of acceptable wafers and increase the cost of manufacturing semiconductor wafers.

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