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Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides

a source gas and waveguide technology, applied in the field of optical waveguide manufacturing, can solve the problems of rendering the device useless and not without problems

Inactive Publication Date: 2006-01-05
CORNING INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the CVD process is the preferred process for depositing many of the materials used to manufacture optical devices, it is not without problems.
However, the optical SiON film can blister and crack at the high temperature, rendering the device useless.

Method used

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  • Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides
  • Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides
  • Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides

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[0024] Deuterated silicon oxynitride and deuterated germanium doped silicon oxynitride films were deposited with an STS Multiflex PECVD system. This system is a parallel plate reactor where the precursor gasses enter through an array of holes in the top electrode (showerhead) and the sample rests on the bottom electrode. The bottom electrode is a non-rotating heated platen. The reaction gases included silane (SiH4), germane (GeH4), nitrous oxide (N2O), deuterated ammonia (ND3) and nitrogen (N2). Regular ammonia (NH3) was also available for making the comparative examples. The refractive index, optical propagation loss and film thickness were determined with a prism coupling system.

[0025] An initial series of thin germanium doped silicon oxynitride films were deposited with and without deuterated ammonia to evaluate the reduction in waveguide loss. These films were deposited on Si(100), SiO2 and Corning 1737 glass substrates to form multimode slab waveguides. The deposition paramete...

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Abstract

The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.

Description

FIELD OF THE INVENTION [0001] The present invention is directed generally to the manufacture of optical waveguides and more particularly to the use of deuterated source gasses to manufacture optical waveguides. BACKGROUND OF THE INVENTION [0002] Practical optical devices must be fabricated so as to direct the light energy. Commonly, this is achieved by creating a waveguide. In the waveguide, a cladding layer of lower refractive index (typically 1.44) directs light by internal reflectance to an optical core of higher refractive index (typically 1.45-1.5). Both the core and cladding layer can be made from many different materials. Common materials include glasses of SiO2-GeO2, SiO2-B2O3-P2O5, SiO2-GeO2-B2O3-P2O5, SiO2 and SiON. Silicon dioxide, silicon nitride and silicon oxynitride are materials which are particularly valued for their optical properties, in particular their high optical transparency and wide range of refractive indices (1.45-2.5). These materials are used in a host o...

Claims

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Application Information

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IPC IPC(8): H01L21/469C03C17/22C03C17/34C23C16/30G02B6/122G02B6/132
CPCC03C4/0042C03C17/225C03C17/3435C03C2217/213C03C2217/228G02B6/132C03C2217/281C03C2218/152C23C16/308G02B6/122C03C2217/24
Inventor BELLMAN, ROBERTAKWANI, IKERIONWU A.SACHENIK, PAUL A.GRANDI, THOMAS P.
Owner CORNING INC