Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

a manufacturing apparatus and semiconductor technology, applied in the direction of electrolysis process, electrolysis components, electric discharge tubes, etc., can solve the problems of difficult to make the clearance between the wafer and the focus ring constant, and the error of 500 m to 1000 m

Inactive Publication Date: 2006-06-29
KK TOSHIBA
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device that can adjust the clearance between a substrate and a focus ring by detecting the detection pattern of the focus ring using a sensor and adjusting the position of the robot arm based on the detection result. This allows for precise placement of the substrate on the electrode and ensures uniform plasma treatment for the substrate. The technical effects of the invention include improved manufacturing efficiency and quality of semiconductor devices.

Problems solved by technology

However, when the wafer is placed on the lower electrode in accordance with the above described procedure in the case where the focus ring is disposed, an error of about 500 μm to 1000 μm occurs to clearance between the wafer and the focus ring.
However, even when the wafer is positioned with respect to the lower electrode by applying this art, the center of a focus ring and the center of the lower electrode are not aligned with each other in many cases, and therefore, it is difficult to make the clearance between the wafer and the focus ring constant.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
  • Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
  • Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0021] Hereinafter, a first embodiment will be explained. FIG. 1 is a schematic diagrammatic view of a semiconductor manufacturing apparatus according to this embodiment, and FIGS. 2A and 2B are a side view including a schematic partial vertical sectional view and a plan view of an inside of an etching chamber according to this embodiment. FIG. 3 is a side view including a schematically shown partial vertical sectional view of the inside of the etching chamber according to this embodiment.

[0022] As shown in FIG. 1 to FIG. 2B, a semiconductor manufacturing apparatus 1 includes a load lock chamber 2 in which a carrier (not shown) housing a plurality of wafers W (substrates) is disposed. A transfer chamber 3 is connected to the load lock chamber 2, and an orienter 4 and an etching chamber 5 (treatment chamber) are connected to the transfer chamber 3. The orienter 4 is for correcting a deviation in the two-dimensional direction of the wafer W with respect to a robot arm 6 which will be...

second embodiment

[0039] Hereinafter, a second embodiment will be explained. In this embodiment, an example of using a metal detector as a sensor will be explained. In the same member and the like as the member explained in the first embodiment, the explanation will be omitted. FIG. 6 is a side view including a schematic partial vertical sectional view of the inside of the etching chamber according to the second embodiment.

[0040] In this embodiment, the detection pattern 9A is constituted of the material with different magnetic permeability from that of the focus ring main body part 9B. More specifically, the focus ring main body part 9B is constituted of nonmetal when the detection pattern 9A is constituted of metal, and when the detection pattern 9A is constituted of nonmetal, the focus ring main body part 9B is constituted of metal. In this embodiment, the case where the detection pattern 9A is constituted of metal and the focus ring main body part 9B is constituted of nonmetal will be explained....

third embodiment

[0048] Hereinafter, a third embodiment will be explained. In this embodiment, an example in which recessed and projected portions are formed on the focus ring will be explained. In the same member and the like as the member explained in the first embodiment, the explanation will be omitted. FIG. 7A and FIG. 7B are front views including schematic partial vertical sectional views of the inside of the etching chamber according to the third embodiment.

[0049] As shown in FIG. 7A, a recessed portion is formed on the surface of the focus ring 9, and the recessed portion becomes the detection pattern 9A. The projector of the optical sensor 11 is configured to irradiate light of which light diameter is larger than the width of the detection pattern 9A. When the focus ring 9 is irradiated with light by the projector, there exist the place where light is reflected at only the focus ring main body part 9B, and the place where light is reflected at the detection pattern 9A and the focus ring ma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
magnetic permeabilityaaaaaaaaaa
voltageaaaaaaaaaa
reflection rateaaaaaaaaaa
Login to View More

Abstract

According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.

Description

CROSS-REFERENCE TO THE INVENTION [0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2004-379446, filed on Dec. 28, 2004; the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates to a semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device. [0004] 2. Description of the Related Art [0005] A robot arm is conventionally used when a wafer is placed on a lower electrode of a plasma processor. More specifically, a wafer is taken out of the carrier in a load lock chamber by a robot arm, and the wafer is conveyed to an orienter, by which deviation in the two-dimensional direction of the wafer with respect to the robot arm is corrected, and the wafer is conveyed into a plasma processing apparatus or in this state and is placed onto the lower electrode. [0006] In the plasma processing apparat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): C25D21/12
CPCH01J37/32642H01J37/32935H01L21/67748H01L21/681
Inventor YAHASHI, KATSUNORITAKENAKA, KEIICHINARITA, MASAKISAKAI, ITSUKO
Owner KK TOSHIBA