Process for forming an electronic device including workpieces and a conductive member therebetween
a technology of workpieces and conductive components, applied in the direction of solid-state devices, semiconductor devices, organic semiconductor devices, etc., can solve the problems of non-functional or poorly functioning driver circuits, electrically connected operable driver circuits to non-functional or poorly functioning oleds, and the effect of reducing the service life of the operating driver circui
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example 1
[0203] Example 1 demonstrates that electrical connections between substrates can be formed using a reflow process. A two-substrate backlight is formed in this example.
[0204] Referring to FIG. 20, a first substrate 200 is glass with a layer 202 of ITO having a thickness of approximately 110 nm. A layer 204 of indium is thermally deposited (e.g. evaporating) on the surface of the ITO in a vacuum of approximately 1×10−6 Torr. The thickness of the indium layer is approximately 650 nm. After the indium layer is deposited, the first substrate 200 and another substrate 206, with a light-emitting organic layer (not illustrated) and a layer 208 of ITO (similar to the first substrate 200) but without the indium layer, are bonded together by a heat curable epoxy 209. An illustration of a cross-sectional view of the bonded substrates is illustrated in FIG. 20. The resistance between the two layers 202 and 208 at this point in the process is extremely high due to the gap between the indium laye...
example 2
[0205] Example 2 demonstrates that conductive members of indium can be formed that pull away from edges of ITO layers during a reflow process.
[0206] Two nominal 10 cm×10 cm substrates are used in this example. Each substrate is glass with 10 ITO strips, each having a thickness of approximately 110 nm and a width of approximately 350 microns. The distance between adjacent strips on each substrate is approximately 150 microns. On one substrate, a layer of indium is thermally deposited through a shadow mask onto the surface of the ITO strips in a vacuum of approximately 1×10−6 Torr. The thickness of the indium layer is approximately 650 nm. After the indium layer is deposited, the two substrates, one with the indium layer, the other one without the indium layer, are bonded together by heat curable epoxy. The ITO strips on each substrate are aligned to be perpendicular to each other. In that way, as seen from a top view, the overlapping area between two strips on separate substrates is...
example 3
[0207] Example 3 demonstrates that a passive matrix display and a backlight can be formed using a reflow process.
[0208] In Example 3, the workpiece includes a driving panel that is a backlight panel. An metallic alloy layer, including approximately 40 weight % In, 40 weight % Sn, and 20 weight % Pb, of approximately 1.5 microns thick is thermally deposited on top of ITO in a vacuum of less than approximately 1×10−6 Torr. The other workpiece includes an OLED panel that is a backlight panel with a passive matrix pixelated area with ITO as a common electrode (e.g., cathode). The pixelated area is made by forming negative photoresist banks. Since the height of the photoresist bank is approximately 3 microns, a gap of approximately 1 micron lies between the indium layer and the cathode of the OLED device during the panel bonding. The total pixel count is approximately 100×50, with pitch size of approximately 100 microns×300 microns. The openings of the photoresist bank for each pixel ar...
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