Aluminum bump bonding for fine aluminum wire
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[0016] Referring to FIG. 1, there is shown a semiconductor package having the aluminum bump bonds of the present invention. The package 10 includes a semiconductor device 12, a leadframe 14, several aluminum bond wires 16, and several bump bonds 18.
[0017] The leadframe 14 includes several leads 20 and a die pad 22 for supporting the semiconductor device 12. The semiconductor device includes several electrodes for being connected to the leads 20 by the bond wires 16. In a particular embodiment, the bond wires 16 have a diameter of about 2 mil (50 μm) and a composition of about 99% aluminum and about 1% silicon. However, the wire 16 may have alternative characteristics in different embodiments. For the purposes of this description, a fine wire is a wire having a diameter of 3 mil or less and a large diameter wire has a diameter of greater than 3 mil.
[0018] The bump bond 18 is shown in detail in FIG. 2, bonding a wire 16 to a lead 20. The lead 20 is typically copper with a nickel pla...
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