Precursors and hardware for CVD and ald

Inactive Publication Date: 2008-03-13
APPLIED MATERIALS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0009] The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet,

Problems solved by technology

While conventional CVD has proved successful for device geometries and aspect ratios down to

Method used

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  • Precursors and hardware for CVD and ald
  • Precursors and hardware for CVD and ald
  • Precursors and hardware for CVD and ald

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Embodiment Construction

[0017] The present invention generally comprises an apparatus for depositing high k dielectric materials or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid precursor or solid precursor delivery cabinet, gas panel, and water vapor generator area. Exemplary high k dielectric material that may be deposited include HfO2, HfSiO, Pr2O3, La2O5, ZrO2, ZrSiO, Al2O3, LaAlO, Ta2O5, TaO5, AlO5, and TiO5. Exemplary metal gate materials that may be deposited include TaN, TiN, TaSiN, Ru, Pt, TiAlN, and HfN. Other films may also be deposited including polysilicon, SiN, and HTO. The apparatus may be an ALD reactor or a CVD reactor.

[0018]FIG. 1 depicts a schema...

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Abstract

The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims benefit of U.S. Provisional Patent Application Ser. No. 60 / 824,037 (APPM / 010158L), filed Aug. 30, 2006, which is herein incorporated by reference.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] Embodiments of the present invention generally relate to precursors and hardware for depositing high k dielectrics and metal gate materials using atomic layer deposition (ALD) or chemical vapor deposition (CVD). [0004] 2. Description of the Related Art [0005] In the field of semiconductor processing, flat-panel display processing or other electronic device processing, vapor deposition processes have played an important role in depositing materials on substrates. As the geometries of electronic devices continue to shrink and the density of devices continues to increase, the size and aspect ratio of the features are becoming more aggressive, e.g., feature sizes of 0.07 μm and aspect ratios of 10 or greate...

Claims

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Application Information

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IPC IPC(8): C23C16/22
CPCC23C16/34C23C16/405C23C16/4404C23C16/45582C23C16/45553C23C16/45561C23C16/45544
Inventor KHER, SHREYAS S.NGUYEN, SON T.NARWANKAR, PRAVIN K.TANDON, SANJEEVJUMPER, STEVESERMONA, VINCENT
Owner APPLIED MATERIALS INC
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