Unlock instant, AI-driven research and patent intelligence for your innovation.

Through-hole interconnection structure for semiconductor wafer

a technology of interconnection structure and semiconductor wafer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, printed circuits, etc., can solve the problems of insufficient connection strength at the connection section for electrically connecting the wafer, large electric resistance, and insufficient connection strength

Inactive Publication Date: 2009-03-05
HONDA MOTOR CO LTD
View PDF11 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration results in a low electric resistance value with minimal variation, providing a highly reliable and stable inter-wafer connection, allowing for a compact semiconductor device with improved yield and reduced number of connecting sections.

Problems solved by technology

However, in a conventional semiconductor device with plural wafers bonded together, an electric resistance value may be large at the electric connection between the wafers, or variation in the electric resistance may be large.
Thus, a reliable electric connection may not be provided between the wafers.
In a conventional semiconductor device with plural wafers bonded together, connecting strength at a connecting section for electrically connecting the wafers may be insufficient.
Thus, a stable electric connection may not be provided between the wafers.
It is therefore required to provide a reliable and stable electric connection between the wafers in a conventional semiconductor device with plural wafers bonded together Especially when a transverse cross sectional area of the connecting section which electrically connects the wafers is reduced to provide a compact semiconductor device, there arises a problem that reliability and stability in the electric connection of the wafers easily become insufficient.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Through-hole interconnection structure for semiconductor wafer
  • Through-hole interconnection structure for semiconductor wafer
  • Through-hole interconnection structure for semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0058]FIGS. 1 to 19 illustrate a through-hole interconnection structure for a semiconductor wafer according to the invention. FIGS. 1 to 2D illustrate configurations of an electrical signal connecting section which is a part of the through-hole interconnection structure according to the invention. FIG. 18 is a cross-sectional view of main part of an exemplary semiconductor device which includes the through-hole interconnection structure for a semiconductor wafer according to the invention. FIGS. 3 to 17 describe a manufacturing process of a semiconductor device shown in FIG. 18. FIG. 19 is a flowchart of the manufacturing process of the semiconductor device shown in FIG. 18.

[0059]The semiconductor device shown in FIG. 18 according to the present embodiment includes an upper wafer 1WA and a lower wafer 1WB which are bonded together. An electrical signal connecting section which includes a through-hole interconnecting section 92 is provided on a bonding surface 30a of the upper wafer ...

other example 1

[0120]FIG. 21 illustrates another example of the through-hole interconnection structure of the semiconductor wafer according to the invention. FIG. 21 is an enlarged vertical longitudinal sectional view showing only a neighborhood of the bonding surface 30a of the upper wafer 1WA of the semiconductor device. The transverse cross-sectional view plan view) of the connecting section of the through-hole interconnection section 96 and the bump 26 in the longitudinal cross-sectional view shown in FIG. 21 is the same as that shown in FIG. 2A. That is, the longitudinal cross-sectional view shown in FIG. 21 corresponds to line C-C in FIG. 2A. The transverse cross-sectional view (plan view) shown in FIG. 2A corresponds to line A-A in FIG. 21.

[0121]As shown in FIG. 21, the through-hole interconnection section 96 includes a through-hole interconnection section main part 96d which penetrates the substrate 1SA, a plug wiring 96e provided in contact with an end of the through-hole interconnection ...

other example 2

[0131]FIGS. 22A and 22B illustrate another example of the through-hole interconnection structure of the semiconductor wafer according to the invention. As in the through-hole interconnection structure of the semiconductor wafer shown in FIG. 22A, when the through-hole separating section 5 has a ring configuration, the bump may be disposed within the ring configuration of the through-hole separating section 5. The bump may also be projected from the ring configuration of the through-hole separating section 5 as in the bump 26a shown in FIG. 22A.

[0132]FIG. 22A is an enlarged vertical longitudinal sectional view showing only a neighborhood of the bonding surface 30a of the upper wafer 1WA when the bump 26a is projected from the ring configuration of the through-hole separating section 5. FIG. 22B is a transverse cross-sectional view (plan view) of the connecting section of the through-hole interconnection section 9 and the bump 26a in a longitudinal cross-sectional view shown in FIG. 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A through-hole interconnection structure for a semiconductor wafer in which plural wafers are bonded together each having a substrate with devices provided thereon, an electrical signal connecting section is provided on a bonding surface of each wafer, the bonding surface being for bonding with other wafers, and the electrical signal connecting section is electrically connected to an electrical signal connecting section provided on another of the oppositely-facing wafers to form a desired semiconductor circuit, the through-hole interconnection structure being provided with: a through-hole interconnection section which has a through-hole protruding section which protrudes from the bonding surface to conduct the opposite surfaces of the wafer, the through-hole interconnection section being one of the oppositely-facing electrical signal connecting sections; and a bump which is the other of the oppositely-facing electrical signal connecting sections, wherein: the through-hole protruding section has an oppositely-placed pair of wiring side walls which extend from the bonding surface toward the another wafer; an end of the through-hole interconnection section is extended to reach an inside of the bump; and the bump is placed between the pair of wiring side walls.

Description

[0001]The present application claims priority of U.S. Provisional Patent Application No. 60 / 957,791 filed Aug. 24, 2007, which is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a through-hole interconnection structure. More particularly, the present invention relates to a through-hole interconnection structure for a semiconductor wafer suitably used in a semiconductor device which includes plural wafers stacked together.[0004]2. Background Art[0005]A three-dimensional semiconductor integrated circuit device has been known which includes two or more wafers stacked together and electrically connected via penetrating wiring. For example, a semiconductor device manufactured in the following method is disclosed in Japanese Unexamined Patent Application, First Publication No. H11-261000.[0006]First, a trench (i.e., a deep groove) is formed on one of the wafers to be stacked together, the ins...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01R12/00
CPCH01L21/76898H01L23/481H01L25/0657H01L25/50H01L2224/16145H01L2225/06513H01L2225/06541H01L2924/1305H01L2924/13091H01L2924/01037H01L2924/00H01L2224/13009H01L2224/05001H01L2224/10126H01L2224/10145H01L2224/10135H01L24/13H01L24/16
Inventor MAEBASHI, TAKANORI
Owner HONDA MOTOR CO LTD