Semiconductor device, rf-ic and manufacturing method of the same
a technology of semiconductor devices and semiconductors, applied in the direction of fixed capacitors, pulse generators, pulse techniques, etc., can solve the problems of substantially difficult inability to use intermediate electrodes as general interconnects, and inability to so as to reduce the space occupied by capacitors and reduce the parasitic capacitance of capacitors
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embodiment 1
[0061]FIG. 1 is a cross-sectional view illustrating a portion of a semiconductor device of Embodiment 1. As illustrated in FIG. 1, an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) 2 and a p channel MISFET 3 are formed over a semiconductor substrate 1 made of silicon single crystal. In a region other than the formation regions of the n channel MISFET 2 and p channel MISFET 3, a capacitor 4 having an MIM structure is formed. In short, MISFETs and capacitor are formed over the semiconductor substrate 1. In the drawings after FIG. 1, MISFETs formed over the semiconductor substrate 1 are omitted and only a capacitor formed over an interlayer insulating film is illustrated.
[0062]FIG. 2 is a plan view of the capacitor 4 viewed from above. In FIG. 2, a lower electrode (first electrode) 10 is formed in the capacitor 4 and it has an intermediate electrode (second electrode) 11 formed thereover via an insulating film (not illustrated). In a region where the lower ele...
embodiment 2
[0094]In Embodiment 1, the intermediate interconnect 39 connected to an upper-level interconnect was described. In Embodiment 2, on the other hand, a manufacturing method of an interconnect 39 connected not only to an upper-level interconnect but also to a lower-level interconnect will be described referring to accompanying drawings.
[0095]As illustrated in FIG. 13, a titanium nitride film 31a, aluminum film 31b and titanium nitride film 31c are successively stacked over an insulating film 30. The titanium nitride film 31a, aluminum film 31b and titanium nitride film 31c can be formed using, for example, sputtering. By photolithography and etching, the titanium nitride film 31a, aluminum film 31b and titanium nitride film 31c are patterned to form a lower electrode (first electrode) 32 and a lower-level interconnect 53 each composed of the titanium nitride film 31a, aluminum film 31b and titanium nitride film 31c. An insulating film (first insulating film) 33 is then formed over the ...
embodiment 3
[0106]In this Embodiment 3, an example of forming a variable capacitor having a stacked structure will be explained. FIG. 22 is a plain view illustrating the capacitor of Embodiment 3. In FIG. 22, a lower electrode 10 is formed and this lower electrode 10 has an intermediate electrode 11 formed thereover via an insulating film (not illustrated). In a region where the lower electrode 10 and intermediate electrode 11 two-dimensionally overlap each other, a capacitor Ca is formed. Over the intermediate electrode 11, upper electrodes 12a to 12c and an interconnect 13 are formed via an insulating film (not illustrated). In a region where the intermediate 11 and upper electrode 12a two-dimensionally overlap each other, a capacitor Cb is formed, while in a region where the intermediate 11 and upper electrode 12b two-dimensionally overlap each other, a capacitor Cc is formed. In a region where the intermediate 11 and upper electrode 12c two-dimensionally overlap each other, a capacitor Cd i...
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