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Method for producing gas barrier film, gas barrier film, and electronic device

a technology of gas barrier film and gas barrier film, which is applied in the direction of coating, chemical vapor deposition coating, layered product, etc., can solve the problems of large number of defects, reduced pressure and atmospheric opening, and poor productivity, and achieve excellent gas barrier performance and productivity

Active Publication Date: 2013-11-28
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for making a gas barrier film that is suitable for roll-to-roll production and has high productivity and gas barrier performance. The technical effect of this invention is to provide a more efficient and effective way for producing gas barrier films, which can be useful in a variety of applications.

Problems solved by technology

These methods have been preferably used for forming metal oxide thin films including SiO2 since a thin film with accurate composition can be formed on a substrate; however, they have had significantly poor productivity in view of the fact that reduction in pressure and atmospheric opening in a film production apparatus need time due to the formation of the films under reduced pressure and in view of the fact that decrease in film production rate is needed for obtaining dense film quality providing a good gas barrier property since poor film quality with many defects is caused by increasing a film production rate.
In the sol-gel process, heating at high temperature is generally necessary and a large volume shrinkage farther occurs in the process of a dehydrative condensation reaction to generate a large number of defects in the film.
Although there has been known a procedure of mixing a source material solution with organic substances which are not directly involved in formation of oxides to prevent this problem, a barrier property is deteriorated to cause an insufficient barrier property in view of the whole film due to the remaining of these organic substances in the film.
Based on them, it has been difficult to use an oxide film produced in the sol-gel process as a protection film for a flexible electronic device directly.
However, the formation of the silicon oxide film by the substitution reaction of the silazane compound requires a high temperature of 450° C. or more and it was not able to be adapted to a flexible substrate such as a plastic.
However, these methods also have had such problems that productivity is insufficient and the barrier performance of the produced gas barrier film is quite insufficient for a gas barrier layer for an organic photoelectric conversion element or the like.
However, the gas barrier layer obtained by this method has been insufficient as a gas barrier layer for an organic photoelectric conversion element or the like and has been significantly poor in productivity since the heat treatment of polysilazane at 160° C. for as long as 1 hour is needed.

Method used

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  • Method for producing gas barrier film, gas barrier film, and electronic device
  • Method for producing gas barrier film, gas barrier film, and electronic device
  • Method for producing gas barrier film, gas barrier film, and electronic device

Examples

Experimental program
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example 1

[0348]>

[0349]As described below, first, bases (a) to (c) were produced, and a gas barrier film was then produced on each produced base via a step for producing a first gas barrier layer and a step for producing a second gas barrier layer.

[0350]>

[0351]A base (a) was prepared and used by using a polyester film having a thickness of 125 μm (Super low heat shrinkage PET Q83, manufactured by Teijin DuPont Films Japan Limited), which was a thermoplastic resin base (support) and both surfaces of which were subjected to adhesion-enhancing processing, and forming a bleedout preventing layer on one surface and a smooth layer on the other surface, as described below.

[0352](Formation of Bleedout Preventing Layer)

[0353]On one surface of the above-described base, a UV curable organic / inorganic hybrid hard coat material OPSTAR Z7535 manufactured by JSR Corporation was coated so that the film thickness after dried was 4 μm, followed by conducting curing under a curing condition: 1.0 J / cm2, under ai...

example 2

[0437]

[0438]Organic EL elements which were organic thin film electronic devices were produced using gas barrier films as listed in Table 4 as sealing films. They were subjected to accelerated aging treatment for 400 hours under an environment of 60° C. and 90% RH to evaluate gas barrier performance arid its stability by comparison with performance prior to the accelerated aging.

[0439](Evaluation of Organic EL Element)

[0440]For the evaluation, each element was ranked according to the following criteria. A practicable range is good or better.

[0441](Evaluation of Black Specks)

[0442]An electric current of 1 mA / cm2 was applied to each sample and light was continuously emitted for 24 hours, followed by magnifying a part of a panel by a 100-time microscope (MS-804 manufactured by Moritex Corporation, lens MP-ZE25-200) to be photographed. A captured image was out into a 2 mm square part, visual observation was carried out, the state of black specks was examined, an element deterioration rat...

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Abstract

An object of the present invention is to provide a method for producing a gas barrier film, capable of producing a gas barrier film which has production suitability in a roll-to-roll manner and is excellent in productivity and in gas barrier performance. The method for producing a gas barrier film including: a coating step for coating a first barrier layer formed on a base with a coating liquid containing a polysilazane compound to form a coating film; and an ultraviolet ray irradiation step for irradiation with a vacuum ultraviolet ray by light sources to form a second barrier layer, wherein an illuminance of the vacuum ultraviolet ray received on a coating film surface by the coating film from start to end of the irradiation with the vacuum ultraviolet ray is 160 mW / cm2 or less, there is a period T during which an illuminance of the vacuum ultraviolet ray on the coating film surface is 50 mW / cm2 or more and 160 mW / cm2 or less, and an amount of energy (E1) received on the coating film surface within T is 180 mJ / cm2 or more and 1800 mJ / cm2 or less.

Description

BACKGROUND[0001]1. Technical Field[0002]The present invention relates to gas barrier films and methods for producing the gas barrier films. More specifically, the present invention relates to a gas barrier film used in a package generally for an electronic device or the like, or in an organic electroluminescence (EL) element, a solar cell element, a liquid crystal display element, or the like and to a method for producing the gas barrier film.[0003]2. Description of Related Arts[0004]Conventionally, gas barrier films formed by laminating a plurality of layers containing thin films of metallic oxides such as aluminum oxide, magnesium oxide, and silicon oxide on plastic substrate and film surfaces have been widely used for packaging articles needing to be shielded against various gases, such as moisture vapor and oxygen, and for packaging applications for preventing change in quality of food products, industrial products, pharmaceutical products, and the like.[0005]In addition to pack...

Claims

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Application Information

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IPC IPC(8): H01L51/52B05D1/00
CPCH01L51/5253B05D1/60C23C16/0272C23C16/402C23C16/50C23C16/545H10K50/844H10K50/841
Inventor MORI, TAKAHIRO
Owner KONICA MINOLTA INC