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Plasma etching apparatus and plasma etching method

Inactive Publication Date: 2014-01-16
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent is about a method for protecting the outer edge of a substrate when etching it. The technical effect is that this helps to prevent damage to the substrate during the process.

Problems solved by technology

When etching the substrate using the plasma etching apparatus in the above process, if the resist applied on the substrate extends to the outer edge portion of the substrate, the resist may come into contact with a substrate carrier or a transfer arm and come off during transfer of the substrate, and this may result in the generation of dust.

Method used

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  • Plasma etching apparatus and plasma etching method
  • Plasma etching apparatus and plasma etching method
  • Plasma etching apparatus and plasma etching method

Examples

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first embodiment

[0039]First, a plasma etching apparatus according to a first embodiment of the present invention is described.

[0040]FIG. 1 is a schematic cross-sectional view illustrating a configuration of the plasma etching apparatus according to the first embodiment of the present invention.

[0041]The plasma etching apparatus includes a processing chamber 1 that is configured to be airtight and is electrically grounded. The processing chamber 1 has a cylindrical structure and may be made of aluminum, for example. A stage 2 that holds a semiconductor wafer W (simply referred to as “wafer W” hereinafter) in the horizontal direction is arranged inside the processing chamber 1. The wafer W is an example of a substrate to be processed. The stage 2 may be made of aluminum, for example, and is configured to act as a lower electrode. The stage 2 is supported by a conductor support 4 and is arranged at a bottom of the processing chamber 1 via an insulating plate 3. A cylindrical inner wall member 3a that ...

example 1

[0109]Pressure within film formation apparatus:[0110]300 mTorr

[0111]High frequency power supply power

[0112](upper electrode / lower electrode):[0113]0 / 1500 W

[0114]Processing gas flow rate:[0115]O2=300 sccm

[0116]Processing time:[0117]30 seconds

example 2

[0118]Pressure within film formation apparatus:[0119]100 mTorr

[0120]High frequency power supply power

[0121](upper electrode / lower electrode):[0122]0 / 2000 W

[0123]Processing gas flow rate:[0124]O2=1300 sccm

[0125]Processing time:[0126]30 seconds

[0127]As illustrated in FIG. 11, the ashing rate tends to decrease as the distance from the outer edge of the wafer W becomes smaller; namely, as the ashing position comes closer to the outer edge of the wafer W. This indicates that while plasma may be prevented from coming around the outer edge portion WE of the wafer W by arranging the upper ring member 51, such an arrangement may cause the ashing rate to decrease near the upper ring member 51. In Example 1, the ratio of the ashing rate at a position 0.3 mm from the wafer edge with respect to the ashing rate at a position 3 mm from the wafer edge is approximately 10%.

[0128]In Example 2, the overall ashing rate is increased compared to Example 1. Also, the ratio of the ashing rate at a position...

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Abstract

A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.

Description

TECHNICAL FIELD[0001]The present invention relates to a plasma etching apparatus and a plasma etching method.BACKGROUND ART[0002]In the field of semiconductor device manufacturing, numerous efforts have been made to increase the density of semiconductor devices through their miniaturization. Recently, attention is being directed to a semiconductor device stacking technique called three-dimensional (3D) packaging as means for increasing the density per unit area of semiconductor devices.[0003]Semiconductor devices stacked in the vertical direction may include electrodes that are arranged to penetrate through a substrate made of silicon, for example. In this way, the semiconductor devices may be electrically connected via the electrodes. To create such an electrode that penetrates through a substrate, a resist is applied on the substrate using a coater, the resist is exposed using an exposure apparatus, and a resist pattern is developed using a developing apparatus. The resist is then...

Claims

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Application Information

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IPC IPC(8): H01L21/3065
CPCH01L21/3065H01J37/32082H01J37/32091H01J37/32165H01J37/32651H01J37/32715H01L21/31138H01L21/68735H01L21/76898H01J2237/334
Inventor DOBA, SHIGEKIYAMADA, SATOSHI
Owner TOKYO ELECTRON LTD