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Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge

a technology of metal oxide semiconductor and field effect transistor, which is applied in the field of cell structure and device configuration of power semiconductor devices, can solve problems such as poor avalanche capability

Active Publication Date: 2014-04-17
FORCE MOS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a trench MOSFET with multiple trenched source-body contacts for reducing gate charge. The source regions are only formed along channel regions near the gate trenches, not between adjacent trenched source-body contacts. The tranched source-body contacts are filled with tungsten plugs, and the source regions are only formed along channel regions near the gate trenches. The trench MOSFET also features a plurality of body contact doped regions surrounding at least bottoms of the multi-trenched source-body contacts, and the gate trenches can be implemented to have single or dual electrodes structure. These features improve the performance and efficiency of the trench MOSFET.

Problems solved by technology

However, n+ source regions 112 are disposed not only along channel regions but also among the multiple trenched source-body contacts 111, causing poor avalanche capability issue because two additional parasitic n+ / P / N+ bipolar transistors exist in the device structure 110.

Method used

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  • Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge
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  • Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge

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Embodiment Construction

[0022]In the following Detailed Description, reference is made to the accompanying drawings, which forms a part thereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as “top”, “bottom”, “front”, “back”, etc., is used with reference to the orientation of the Figure(s) being described. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is used for purpose of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be make without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims. It is to be understood that the features of the various exemplary embodiments described herein...

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Abstract

A trench MOSFET with multiple trenched source-body contacts is disclosed for reducing gate charge by applying multiple trenched source-body contacts in unit cell. Furthermore, source regions are only formed along channel regions near the gate trenches, not between adjacent trenched source-body contacts for UIS (Unclamped Inductance Switching) current enhancement.

Description

FIELD OF THE INVENTION[0001]This invention relates generally to the cell structure and device configuration of power semiconductor devices. More particularly, this invention relates to a novel and improved cell structure and device configuration of a trench metal oxide semiconductor field effect transistor (MOSFET, the same hereinafter) with multiple trenched source-body contacts.BACKGROUND OF THE INVENTION[0002]FIG. 1A shows a conventional trench MOSFET 100 of prior art, wherein a single trenched source-body contact 101 is penetrating through an n+ source region 102 and extending into a P body region 103 between two adjacent trenched gates 104 in an active area, wherein the n+ source region 102 is formed in an upper portion of the P body region 103. For trench MOSFET like the trench MOSFET 100 with voltage rating below 100V (Low Voltage), channel resistance Rch accounts for about 10% and 30% of total Rds at Vgs=10V and at Vgs=4.5V respectively for a 30V N-channel device. It can be ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/78
CPCH01L29/4232H01L29/7813H01L29/407H01L29/41766H01L29/4236H01L29/42368H01L29/456H01L29/1095
Inventor HSIEH, FU-YUAN
Owner FORCE MOS TECH CO LTD