Wiring structure and electronic device employing the same

Abstract

Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

Description

RELATED APPLICATIONS[0001]This application claims priority from Korean Patent Application Nos. 10-2014-0019211, filed on Feb. 19, 2014, and 2014-149331, filed on Oct. 30, 2014, in the Korean Intellectual Property Office, the disclosure of each of which being incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a wiring structure and / or an electronic device employing the same, more particularly, example embodiments relate to a wiring structure capable of reducing a line width and decreasing a wiring resistance, and / or an electronic device employing the same.[0004]2. Description of the Related Art[0005]Regarding high-density and high-performance semiconductor devices, efforts to reduce a line width and a thickness of a metal wiring have been made. When the line width and the thickness of the metal wiring are reduced, the number of semiconductor chips to be accumulated for each wafer may be increased. In addition, when the thickne...

AI Technical Summary

Benefits of technology

The patent text discusses a wiring structure that uses graphene to reduce line width and wiring resistance in electronic devices. The technical effect of this structure is improved performance and reliability in electronic devices.

Problems solved by technology

A current interconnect technology has approached a physical limit in that a specific resistance greatly increases with a considerable decrease in the line width.

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