Semiconductor device and method for producing a semiconductor device

Abstract

A semiconductor device includes first pillar-shaped silicon layers, a first gate insulating film formed around the first pillar-shaped silicon layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed around upper portions of the first pillar-shaped silicon layers, first contacts formed of a first metal material and formed around the second gate insulating film, second contacts formed of a second metal material and connecting upper portions of the first contacts and upper portions of the first pillar-shaped silicon layers, second diffusion layers formed in lower portions of the first pillar-shaped silicon layers, and variable-resistance memory elements formed on the second contacts.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of copending international patent application PCT / JP2013 / 076031, filed Sep. 26, 2013; the entire contents of the prior application are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a semiconductor device and a method for producing a semiconductor device.[0004]2. Description of the Related Art[0005]In recent years, phase-change memories have been developed (for example, refer to Japanese Unexamined Patent Application Publication No. 2012-204404 and its counterpart U.S. Pat. No. 9,025,369 B2). Such a phase-change memory records changes in the resistances of information memory elements in memory cells to thereby store information.[0006]The phase-change memory uses the following mechanism: turning on a cell transistor causes a current to pass between a bit line and a source line; this causes a high-resistance-element heater t...

AI Technical Summary

Benefits of technology

The present invention provides a memory structure that allows a large current to pass through a selected transistor and includes a variable-resistance memory element. The memory structure includes a semiconductor device with a fin-shaped semiconductor layer, a first pillar-shaped semiconductor layer, a first gate insulating film, a gate line, a second diffusion layer, and a second pillar-shaped semiconductor layer. The semiconductor device also includes a contact line connected to the second diffusion layer. The memory structure provides a solution for addressing issues related to current limitation and allows for the formation of a large number of memory elements.

Problems solved by technology

However, a current passes through the gate, which makes it difficult to connect a large number of transistors to the word line.

Accordingly, for narrow silicon pillars, it is difficult to make impurities be present within the silicon pillars.

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