Plasma processing apparatus

Abstract

A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite endse and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to Japanese Patent Application No. 2014-225230 filed on Nov. 5, 2014, the entire contents of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present invention relates to a plasma processing apparatus which performs a process on a substrate by exciting a processing gas.BACKGROUND OF THE INVENTION[0003]As one of the semiconductor manufacturing processes, there is a plasma process such as an etching process, a film forming process or the like which uses plasma of a processing gas. For example, in a single-subatrate plasma processing apparatus, it is required to properly control the plasma density distribution to become appropriate in a plane direction of a substrate depending on a process type, specifically based on a structure in a processing chamber or in consideration of in-plane deviation of the substrate in a post-process. Therefore, the requirement is not limited to making the...

AI Technical Summary

Benefits of technology

[0006]In view of the above, the present invention provides a technique for adjusting in-plane distribution of plasma density in a plasma processing apparatus which performs a process on a substrate by generating plasma by using a high frequency antenna.

[0007]In accordance with an aspect, there is provided a plasma processing apparatus for performing a plasma process on a substrate in a processing chamber, the apparatus including: a mounting table on which the substrate is mounted, the mounting table being provided in the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber; an exhaust unit configured to vacuum-exhaust an inside of the processing chamber; a plasma generation unit arranged opposite to the mounting table through a dielectric window, the plasma generation unit including a high frequency antenna for converting the processing gas supplied into the processing chamber into plasma by an inductive coupling; and a shield member that surrounds a space where the high frequency antenna is arranged.

[0008]The plasma generation unit includes: a first high frequency antenna formed of a vortex coil having open ends at an inner side and an outer side, and including, at a central portion of a line between the open ends, a supply point of a high frequency power supplied from a high frequency power supply and a grounding point g

Problems solved by technology

However, Japanese Patent Application Publication No. 2011-119659 does not disclose a technique for adjusting the distribution of h

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