Surface shape measuring apparatus

a technology of surface shape and measuring apparatus, which is applied in the direction of measuring devices, instruments, scientific instruments, etc., can solve the problems of long time and substantially impossible to measure the entire surface of wafers, and achieve the effect of detailed surface shap

Inactive Publication Date: 2016-06-23
HITACHI HIGH-TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention allows for a more precise analysis of the surface shape compared to existing methods.

Problems solved by technology

However, since the AFM takes a long time for measurement, it is substantially impossible to measure the entire wafer surface.

Method used

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embodiment 1

[0043]As an embodiment of the invention, a surface shape measuring apparatus of micro roughness of a wafer surface in semiconductor device manufacture will be described.

[0044]FIG. 1 shows a rough structure of the surface shape measuring apparatus. Main components include a stage 2 on which a wafer 1 is mounted, a light source 3, an illumination optical system 4 including a lens, a mirror and the like, detection optical systems 51 to 55 (53 to 55 are not shown) including a lens, a mirror and the like, optical detectors 61 to 65 (63 to 65 are not shown), a signal processing system 7, a control system 8 and an operation system 9.

[0045]Next, a measurement flow of a surface shape in this embodiment will be described by using FIG. 2.

[0046]Light of a specific wavelength emitted from the light source 3 is converted into specific polarization light by a polarization filter (not shown). A spot beam with a specific size is formed by the illumination optical system 4, and is illuminated to the ...

embodiment 2

[0069]Next, embodiment 2 will be described. According to embodiment 2, measurement accuracy is improved also in anisotropic micro roughness. In embodiment 2, portions different from embodiment 1 will be mainly described.

[0070]A step-terrace structure appearing in an epitaxial growth wafer has a specific spatial frequency in a specific direction. FIG. 10 shows two spatial frequency spectra S3 and S4 of the micro roughness of the epitaxial growth wafer. The spatial frequency spectrum S3 is in a direction in which the step-terrace structure does not appear, and the spatial frequency spectrum S4 is in a direction in which the step-terrace structure appears. In the step-terrace structure, the spatial frequency spectrum has a sharp peculiar peak 601 at a specific spatial frequency in a specific direction. The peak 601 corresponds to the step-terrace structure.

[0071]FIG. 11 shows an example of a detection optical system arrangement suitable for detecting the spatial distribution of scatter...

embodiment 3

[0075]Next, embodiment 3 will be described. In embodiment 3, spatial frequency resolution is further improved in embodiment 1 and embodiment 2.

[0076]A point in which a light 1201 is illuminated to a surface of a wafer 1 is the same as embodiment 1 and embodiment 2. In embodiment 3, the detection optical system of embodiment 1 and embodiment 2 is replaced by a Fourier transform optical system 1202. The Fourier transform optical system 1202 detects by using a Fourier transform lens 1205 to concentrate scattered lights 1203 and 1204 from the wafer 1, and a 2D sensor 1207 to detect a parallel light 1206 collimated by the Fourier transform lens 1205. As the 2D sensor, a charge coupled device (CCD), a time delay integration sensor (TDI), a multi-pixel photon counter, an avalanche photodiode array or the like can be used

[0077]In embodiment 3, after the light is detected by the 2D sensor 1207, the same process as embodiments 1 and 2 is performed.

[0078]In embodiment 3, since the intensity d...

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Abstract

In related art, consideration is not given to that a spatial distribution of scattered light changes in various direction such as forward / backward / sideways according to a difference in micro roughness. Particularly, although a step-terrace structure appearing on an epitaxial growth wafer produces anisotropy in the scattered light distribution, consideration is not given to this point in the related art. The invention includes a process in which light is illuminated to a sample surface, plural detection optical systems mutually different in directions of optical axes detect a spatial distribution of scattered light, and a spatial frequency spectrum of the sample surface is calculated.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This Application is a Continuation Application of U.S. Ser. No. 14 / 240,669 filed Feb. 24, 2014, which is the U.S. National Phase of PCT / JP2012 / 069076 filed Jul. 27, 2012, which claims priority to Japanese Patent Application No. 2011-188164 filed Aug. 31, 2011. The subject matter of each is incorporated herein by reference in entirety.TECHNICAL FIELD[0002]The present invention relates to a surface shape measuring apparatus for obtaining a surface shape. For example, the invention relates to a surface shape measuring apparatus using light scattering, and particularly to a measuring apparatus of micro roughness of a wafer surface or the like in a semiconductor device manufacturing process.BACKGROUND ART[0003]As a semiconductor device is micronized, the influence of micro roughness of the surface of a bare wafer or a wafer with film on electrical characteristics increases. Since the micro roughness is produced in processes such as polishing, ...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): G01B11/30G01N21/55
CPCG01N21/9501G01B11/303G01B2210/56G01N2201/12G01N21/55G01N21/4738G01B11/24
InventorITO, MASAAKIJINGU, TAKAHIROHATANO, HISASHI
OwnerHITACHI HIGH-TECH CORP