Semiconductor device and method of fabricating the same

Abstract

A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an interconnect structure, and an oxide semiconductor structure. The substrate has a first region and a second region. The interconnect structure is disposed on the substrate, in the first region. The oxide semiconductor structure is disposed over a hydrogen blocking layer, in the second region of the substrate.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device and a method for forming the same, and more particularly, to a semiconductor device having an oxide semiconductor structure and a method for forming the same.[0003]2. Description of the Prior Art[0004]In the modern society, the micro-processor systems comprising integrated circuits (IC) are ubiquitous devices, being utilized in diverse fields such as automatic control electronics, mobile communication devices and personal computers. With the development of technology and the increase of original applications for electronic products, the IC devices are becoming smaller, more delicate and more diversified.[0005]In a wide variety of materials, indium oxide (In2O3), tin oxide (SnO2) and zinc oxide (ZnO) are generally known transparent conductive oxides. Indium tin oxide (ITO), when being formed of a thin film, can be used as a transparent electrode in a flat panel disp...

AI Technical Summary

Benefits of technology

[0007]The present invention therefore provides a semiconductor device having an oxide semiconductor structure and a method for forming the same, in order to gain a better product performance.

[0010]According to the above, the semiconductor device and the forming method thereof in the present invention is at least characterized by disposing a multilayer structure of hydrogen blocking layers (including oxide metal) in the metal interconnect structure between a metal oxide semiconductor (MOS) transistor and an oxide semiconductor (OS) structure. The hydrogen blocking layer for example includes silicon oxynitride or earth metal oxide, like hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, aluminum oxide, lanthanum oxide or hafnium zirconium oxide for example, and which is formed on each plug structure and damascene structure to block out-diffusion mist and hydrogen in the device, so as to avoid such out-diffusion mist and hydrogen flowing along the metal interconnect structure and affecting the device or the subsequent forming processes. Also, if the plug structure or the damascene structure includes a copper layer, an additional capping layer, like a silicon oxide layer, silicon nitride layer, a silicon oxynitride layer, or a silicon carbonitride layer for example, may be further disposed before the hydrogen blocking layer is formed, to further prevent copper from diffusing into periphery dielectric layer and to further improve the reliability of the device thereby.

Problems solved by technology

With the development of technology and the increase of original applications for electronic products, the IC devices are becoming smaller, more delicate and more diversified.

However, due to oxidation of the semiconductor material itself, when using of this oxide semiconductor material, it is easy to damage the oxide semiconductor layer during the production process, thus affecting the performance of the product.

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