Semiconductor light emitting device

Inactive Publication Date: 2018-06-28
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]Exemplary implementations of semiconductor light emitting devices constructed according to the principles of the invention are particularly adapted to emit DUV light and improve forward voltage characteristics and light efficiency. For example

Problems solved by technology

However, since a significant amount of light emitted from the multiple quantum well structure is absorbed in the

Method used

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  • Semiconductor light emitting device
  • Semiconductor light emitting device
  • Semiconductor light emitting device

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Example

[0041]In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments or implementations of implementations of the invention. As used herein “embodiments” and “implementations” are interchangeable words that are non-limiting examples of devices or methods employing one or more of the inventive concepts disclosed herein. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments. Further, various exemplary embodiments may be different, but do not have to be exclusive. For example, specific shapes, configurations, and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment with...

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Abstract

A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material, wherein the Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims priority from and the benefit of Korean Patent Application No. 10-2016-0178046 filed on Dec. 23, 2016, which is hereby incorporated by reference for all purposes as if fully set forth herein.BACKGROUNDField[0002]Exemplary implementations of the invention relate generally to an electronic device and, more particularly, to a semiconductor light emitting device including a light emitting structure, such as a light emitting diode, capable of emitting deep ultraviolet light.Discussion of the Background[0003]Semiconductor light emitting diodes (LEDs) are devices in which light is emitted by a material contained in a device using electric energy, and have inorganic semiconductors emitting light generated by recombination of electrons and holes. Semiconductor light emitting diodes (LEDs) have a number of advantages over filament-based light sources, such as long lifetime, low power, and good initial drive characteristics, a...

Claims

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Application Information

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IPC IPC(8): H01L33/40H01L33/38H01L33/32H01L33/62
CPCH01L33/405H01L33/38H01L33/32H01L33/62H01L33/06H01L33/42H01L2933/0016H01L2933/0066H01L33/20H01L33/36H01L33/02H01L33/40H01L33/10H01L2924/12041
Inventor JANG, SEONG KYUPARK, JU YONGLEE, KYU HOLEE, JOON HEE
Owner SEOUL VIOSYS CO LTD
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