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Antifuse structure

a technology of antifuse and insulating layer, which is applied in the direction of semiconductor/solid-state device details, electrical apparatus, semiconductor devices, etc., can solve the problems of short circuit between the two conductors, increased leakage current, and thermal runaway condition

Active Publication Date: 2022-02-24
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes an antifuse structure that includes a ring-shaped gate electrode that overlaps with a portion of the active area. The active area has a higher dopant concentration than another portion of the active area. A dielectric layer is sandwiched between the active area and the gate electrode. An isolation structure may also be included. The dielectric layer has a higher thickness when sandwiched between the active area and the gate electrode. The antifuse structure may also include a first and second conductive via and a doped well region. The technical effects of this structure are improved programming precision and efficiency, as well as reduced power consumption and improved reliability.

Problems solved by technology

A leakage current increases and a thermal runaway condition develops, melting the insulator and adjacent conductive materials.
The conductive materials flow from the two conductors and form a conductive filament, resulting in a short circuit between the two conductors.
However, how to increase the conductive properties of the antifuse structure is an issue that needs to be improved in the art.

Method used

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Embodiment Construction

[0023]In order that the present disclosure is described in detail and completeness, implementation aspects and specific embodiments of the present disclosure with illustrative description are presented, but it is not the only form for implementation or use of the specific embodiments of the present disclosure. The embodiments disclosed herein may be combined or substituted with each other in an advantageous manner, and other embodiments may be added to an embodiment without further description. In the following description, numerous specific details will be described in detail in order to enable the reader to fully understand the following embodiments. However, the embodiments of the present disclosure may be practiced without these specific details.

[0024]Further, spatially relative terms, such as “beneath,”“over,” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as shown in the figures. Th...

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Abstract

An antifuse structure includes an active area, a gate electrode and a dielectric layer. The gate electrode is over the active area, in which the gate electrode is ring-shaped, and a portion of the gate electrode is overlapped with a portion of the active area in a vertical projection direction, and the portion of the active area has a dopant concentration higher than a dopant concentration of another portion of the active area. The dielectric layer is sandwiched between the portion of the active area and the portion of the gate electrode.

Description

BACKGROUNDField of Invention[0001]The present invention relates to an antifuse structure.Description of Related Art[0002]In integration circuit fabrication, the antifuse and the fuse are widely used for fault tolerance. For example, the antifuse and the fuse may be placed in circuit paths in a device. An originally conductible circuit path may become an open circuit by blowing a fuse. In contrast, an originally unconductible circuit path may become a short circuit by blowing an antifuse. In addition, the antifuse is also used for one-time programming.[0003]One type of the antifuse structure is comprised of two conductors separated from each other by an insulator. The two conductors are separately connected to different components. The path between the two conductors is an unconductible circuit path, i.e., an open circuit, when the applied voltage is lower than a programming voltage. When the programming voltage is applied, the insulator undergoes a dielectric breakdown process. A le...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L23/525H01L27/112
CPCH01L23/5252H01L27/11206H10B20/25
Inventor HUANG, CHIN-LINGCHEN, YU-FANGLIN, CHUN-HSIENLIAO, CHIA-PING
Owner NAN YA TECH