Exposure apparatus configured to minimize effects of mechanism for measuring stage position on peripheral mechanism and device-manufacturing method

a technology of peripheral mechanism and exposure apparatus, which is applied in the direction of measurement device, photomechanical treatment, instruments, etc., can solve the problems of serious design limitations in providing such a supporting structure, insufficient space for projection optical system and the like, and achieve less effect on peripheral mechanism and high controllability

Inactive Publication Date: 2010-06-15
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This configuration reduces the impact of the Z-axis measurement mechanism on peripheral systems, enabling more efficient use of space and enhancing the controllability and precision of the reticle stage movement, while minimizing weight and maintaining high optical performance.

Problems solved by technology

However, since an optical system for guiding exposure light to the reticle is disposed above the reticle stage 110, there is not enough space for such a structure.
However, there are serious design limitations in providing such a supporting structure that supports the projection optical system above the reticle stage 110.
However, if the laser interferometer is disposed directly below the reticle stage 110, there is not enough space for the projection optical system and the like.

Method used

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  • Exposure apparatus configured to minimize effects of mechanism for measuring stage position on peripheral mechanism and device-manufacturing method
  • Exposure apparatus configured to minimize effects of mechanism for measuring stage position on peripheral mechanism and device-manufacturing method
  • Exposure apparatus configured to minimize effects of mechanism for measuring stage position on peripheral mechanism and device-manufacturing method

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first embodiment

[0024]FIG. 1 schematically illustrates an exposure apparatus according to a first embodiment of the invention.

[0025]As shown in FIG. 1, the exposure apparatus includes an illumination device 101, a reticle stage 102 on which a reticle is placed, a projection optical system 103, and a wafer stage 104 on which a wafer is placed.

[0026]The exposure apparatus projects a circuit pattern formed on the reticle onto the wafer by exposure using a step-and-repeat exposure method or a step-and-scan exposure method.

[0027]The illumination device 101 illuminates the reticle having the circuit pattern and includes a light source unit and an illumination optical system. The light source unit includes, for example, a laser as a light source.

[0028]The laser may be, for example, an ArF excimer laser with a wavelength of about 193 nm, a KrF excimer laser with a wavelength of about 248 nm, or an F2 excimer laser with a wavelength of about 153 nm.

[0029]However, the laser is not limited to excimer lasers, ...

second embodiment

[0088]FIG. 4 is a side view showing a relevant part of a reticle stage 102 included in an exposure apparatus according to a second embodiment of the invention, as viewed in the X-axis direction. Reference numerals in FIG. 4 that are the same as those in FIGS. 1, 2A, and 2B indicate the same elements.

[0089]The exposure apparatus according to the second embodiment of the invention has reference mirrors 18 that do not allow transmission of reference light emitted from the Z-axis interferometers 7 (first interferometer). In other words, the reference mirrors 18 only reflect the reference light.

[0090]Each reference mirror 18 is supported by a supporter at a position on the light path of measurement light 16c between the corresponding fine-motion Z-axis mirror 13 (first mirror) and reflecting mirror 16a (second mirror).

[0091]In addition to measurement light 16c, the Z-axis interferometers 7 emit reference light (not shown) simultaneously in the same direction.

[0092]The measurement light 1...

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Abstract

An exposure apparatus includes a stage configured to hold an original thereon and to move in a horizontal direction, a first interferometer configured to emit first measurement light used for measuring a position of the stage in a vertical direction thereof, a first mirror provided on a bottom surface of the stage, and a second mirror provided directly below the first mirror. The second mirror is disposed so as to guide the first measurement light emitted from the first interferometer to the first mirror.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to exposure apparatuses used in manufacturing processes of devices, such as semiconductor and liquid crystal devices, and having high controllability of stages, and to device-manufacturing methods performed using such exposure apparatuses.[0003]2. Description of the Related Art[0004]In related art, when devices such as semiconductor or liquid crystal devices are to be manufactured, a projection-type exposure apparatus is used. Specifically, in such an exposure apparatus of a projection type, a pattern drawn on a reticle by photolithography is de-magnified and projected by a projection optical system, and the pattern is then transferred onto a wafer.[0005]In order to perform an exposure process with high precision, the reticle is held by a reticle stage and moves together with the reticle stage.[0006]If the exposure apparatus is of a scanning type, the reticle stage needs to move by a long s...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): G01B9/02
CPCG03F7/70775G03F7/70716G03F7/7085
InventorTANAKA, HIDEO
OwnerCANON KK