Thin film transistor substrate with intermediate insulating layer and display using the same
a technology of thin film transistors and substrates, applied in the direction of electrical equipment, semiconductor devices, instruments, etc., can solve the problem of low power consumption limitation and achieve the effect of reducing the number of mask processes and efficient manufacturing processes
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first embodiment
[0041]FIG. 1A is a cross sectional view illustrating a structure of a thin film transistor substrate for a flat panel display in which two different type thin film transistors are formed according to the present disclosure. FIG. 1B is a cross sectional view illustrating a structure for connecting between the data line and source electrode, and between the gate line and the gate electrode in the thin film transistor shown in FIG. 1A. Here, the cross sectional views more clearly and conveniently show the main features of the present disclosure.
[0042]With reference to FIG. 1A, the thin film transistor substrate for a flat panel display according to the first embodiment comprises a first thin film transistor T1 and a second thin film transistor T2 which are disposed on the same substrate SUB. The first and second thin film transistors T1 and T2 may be far apart from each other, or they may be disposed within a relatively close distance. Otherwise, these two thin film transistors are dis...
second embodiment
[0081]FIG. 3 is a cross sectional view illustrating a structure of a thin film transistor substrate for a flat panel display in which two different types of thin film transistors are formed according to the present disclosure.
[0082]The thin film transistor substrate according to the second embodiment is similar to that of the first embodiment. One difference is that, in the FIG. 3 example, the intermediate layer ILD has a double-layer structure. The intermediate insulating layer ILD may include a nitride layer SIN and a lower oxide layer SIO2. For example, the lower oxide layer SIO2 may be stacked on a nitride layer SIN. Otherwise, the nitride layer SIN may be stacked on the lower oxide layer SIO2. Here, the “lower” of the lower oxide layer SIO2 is so named because it is disposed under the oxide layer SIO, but the term “lower” does not mean that the lower oxide layer SIO2 is disposed under the nitride layer SIN.
[0083]By the post-thermal process, the hydrogen particles in the nitride...
third embodiment
[0102]FIG. 5 is a cross sectional view illustrating a structure of a thin film transistor substrate for a flat panel display in which two different type thin film transistors are formed according to the present disclosure.
[0103]The thin film transistor substrate according to the third embodiment is similar to that of the first and the second embodiments. One difference is that the oxide may act as the intermediate insulating layer for the first thin film transistor T1, and as the gate insulating layer for the second thin film transistor T2. For example, the intermediate layer ILD may include a first intermediate insulating layer ILD1 and a second intermediate insulating layer ILD2. The first intermediate insulating layer ILD1 may have a double-layer structure in which a lower oxide layer SIO2 and a nitride layer SIN are stacked. Further, the nitride layer SIN may be selectively disposed over only the first area where the first thin film transistor T1 is located, but not in the secon...
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