Method for manufacturing a color filter, color filter and solid-state imaging device

Abstract

The present disclosure relates to a method for manufacturing a color filter being capable of suppressing residue from being generated on a colored layer planarized by a planarization treatment, a color filter, and a solid-state imaging device.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)[0001]This is a continuation of International Application No. PCT / JP2012 / 072830 filed on Aug. 31, 2012, claims priority from Japanese Patent Application No. 2011-190188 filed on Aug. 31, 2011, the entire disclosures of which are incorporated herein by reference.TECHNICAL FIELD[0002]The present invention relates to a method for manufacturing a color filter, a color filter and a solid-state imaging device.[0003]For example, in a solid-state imaging device, a color filter is installed, in which colored pixels of a plurality of colors such as red pixels, green pixels and blue pixels are two-dimensionally arranged on a support such as a semiconductor substrate. Recently, in the solid-state imaging device, the increase in the number of pixels has been significant. The reduction in the pixel size is significant as compared with the same inch-sized solid-state imaging device in the related art. Further, as the pixel size reduces, performance requirem...

AI Technical Summary

Benefits of technology

This approach effectively suppresses residue generation during planarization, enabling the manufacture of color filters with microsize features, such as thicknesses of 0.7 μm or less and pixel pattern sizes of 2 μm or less, while maintaining rectangularity and improving device sensitivity.

Problems solved by technology

However, as the pixels of a solid-state imaging device are micronized, it has become difficult to achieve both spectral characteristics and pattern formability of a color filter for the demand for micronization and thinning of the color filter in the pattern formation by a so-called photolithography.

In particular, as the thinning of a film progresses, the relative amount of colorants such as pigments in a film increases, while the amount of components other than the colorants, which contribute to the photolithographic properties, in a film relatively decreases, and the pattern formability due to the decrease has effects of improving the shape of a pattern observed on the top surface thereof even when a correction such as OPC is performed for the requirement of forming a pattern below 2.0 μm, but there is a problem such as insufficient rectangularity that the pattern edge of the pattern shape is round when observed the cross-section.

In particular, recently, due to the demand for the higher definition of the color filter for a solid-state imaging device, the formability of a pattern of, for example, 1.4 μm becomes problematic, and thus, the resolution may almost reach a limit in the photolithography in the related art.

At this time, there has been a problem in that, if residue caused by the colored layer of the third tint (specifically, residue generated during development of the colored layer of the third tint) is present on a layer planarized by the planarization treatment, the spectra of the first colored layer and the like are changed, resulting in a reduction of a device sensitivity.

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