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Electronic semiconductor power device with integrated diode

a technology of integrated diodes and power devices, applied in the direction of semiconductor devices, electrical apparatus, transistors, etc., can solve the problems of large size of the whole device and greater construction complexity

Inactive Publication Date: 2008-04-08
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is about an electronic device that has a built-in diode with specific operating characteristics. This invention improves the functionality of the electronic device.

Problems solved by technology

This results in a greater complexity of construction and a larger size of the whole device.

Method used

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  • Electronic semiconductor power device with integrated diode
  • Electronic semiconductor power device with integrated diode
  • Electronic semiconductor power device with integrated diode

Examples

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Embodiment Construction

[0021]The device shown in FIGS. 3 and 4, in which elements identical to those of the structure in FIGS. 1 and 2 are denoted by the same reference numbers, differs in one respect from the known device in that the termination structure comprises, between the termination region 14 and the EQR electrode 21, a further electrode 30 in ohmic contact with the epitaxial layer 11 through a diffused high-concentration N type region 31, and a further P type termination region 32, formed by a low-concentration surface part 32′ and a high-concentration deep part 32″ and having a surface contact electrode 33.

[0022]As shown in plan view in FIG. 4, the electrode 30 surrounds, in the form of a frame, the active part of the device comprising the region 13 and any other P type regions identical to the region 13. The second termination region 32 is also shaped in the form of a frame which surrounds the electrode 30. The electrodes 18 and 33 are connected, by a metal wire in each case, to the emitter ter...

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PUM

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Abstract

A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a first electrode in contact with the first termination region, and a second electrode shaped in the form of a frame close to the edge of the chip and connected to a third electrode in contact with the bottom of the chip. A fourth electrode made in one piece with the first electrode is in contact with the first region. The termination structure also comprises a fifth electrode in contact with the epitaxial layer along a path parallel to the edge of the first termination region and connected to the second electrode and a second P type termination region that surrounds the fifth electrode and a sixth electrode, and which is in contact with the second termination region, connected to the first electrode.

Description

TECHNICAL FIELD[0001]The present invention relates to an electronic semiconductor device having a modified insulated gate bipolar transistor with integrated diode.BACKGROUND OF THE INVENTION[0002]A known electronic device is a transistor of the type called IGBT (Insulated Gate Bipolar Transistor). IGBT devices are components used in power applications as an alternative to bipolar junction transistors (BJT) or field-effect power transistors, such as vertical conduction transistors, known as VDMOS (Vertical Double diffused Metal Oxide Semiconductor) transistors. They are sometimes preferred to BJT and VDMOS transistors because they have a smaller size with the same electrical performance. In some applications, however, VDMOS transistors are more advantageous than IGBT devices because they contain, as a component intrinsic to their structure, a reverse diode between the drain and source. A typical application in which this characteristic of the VDMOS is exploited is that in which the p...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L27/082H01L27/102H01L29/70H01L31/11H01L27/06H01L29/10
CPCH01L27/0611H01L29/1095H01L2224/48247H01L2224/48257H01L2224/73265H01L2924/10253H01L2924/1305H01L2924/13055H01L2924/00
Inventor FRAGAPANE, LEONARDO
Owner STMICROELECTRONICS SRL