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Terminal detecting method for plasma etching technology

A technology of plasma and endpoint detection, which is applied in the field of microelectronics, can solve problems such as limiting practical applications, and achieve the effect of improving etching quality

Active Publication Date: 2008-01-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this algorithm is the large amount of calculation, which limits the practical application of this algorithm in the detection of etching endpoints.

Method used

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  • Terminal detecting method for plasma etching technology
  • Terminal detecting method for plasma etching technology

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Embodiment 1

[0049] FIG. 1 is an etching end point detection map of Example 1 of the present invention. It can be seen from the map that it is difficult to identify the turning point near the end point through the traditional neural network-based algorithm.

[0050] Fig. 2 is the Markov model corresponding to embodiment 1, by carrying out Markov decomposition to the map of Fig. 1, the map of whole Fig. 1 is divided into two parts, one part corresponds to state 1, and the other part corresponds to state 2, The implicit equations of state for state 1 and state 2 are obtained by linear or polynomial fitting to the observed values. Next, by solving the transition probability between state 1 and state 2, the transition point between state 1 and 2 is obtained, so as to accurately detect the etching end point

Embodiment 2

[0052] FIG. 3 is an etching end point detection map of Example 2 of the present invention. It can be seen from the map that it is difficult to identify the turning point near the end point through the traditional neural network-based algorithm.

[0053]Fig. 4 is the Markov model corresponding to embodiment 2, and the internal small picture wherein is the signal spectrum near the predicted terminal position, by carrying out Markov decomposition to the spectrum of Fig. 3, the spectrum of whole Fig. 3 is divided into three parts, One part corresponds to state 0, the middle part corresponds to states 1~M (this position corresponds to the signal spectrum near the end point), and the last part corresponds to state M+1. The implicit state equations from state 0 to state M+1 are obtained by linear or polynomial fitting to the observed values. Next, by solving the transition probability between state 0 and state 1, and the transition probability between state M and state M+1, the trans...

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Abstract

This invention is a kind of end point checking method of plasma etching process. First, establish markov model based on change of state of plasma etching process; second, get corresponding state changing atlas during process of plasma etching; last, ensure etching process end point through comparing of state changing atlas and markov model. The method can find etching end point precisely. It can also control the etching process and increase etching quality.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an endpoint detection method of a plasma etching process. Background technique [0002] In the VLSI process, it is necessary to process extremely fine-sized patterns (Patterns) on silicon wafers. The most important way to form these patterns is to use etching technology to transfer the patterns formed on the photoresist to the dielectric material under the photoresist without error, so as to form the complex structure of the entire integrated circuit. Therefore, the etching pattern transfer technology occupies an extremely important position in the integrated circuit process. With the continuous increase of device integration density and complexity in integrated circuits, strict control of the process is particularly important. This requires the use of real-time monitoring methods to control the key stages of the process. For example, in the etching process of polysili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/3065
Inventor 许仕龙
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD