Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma processing system with dynamic gas distribution control

A plasma and processing system technology, applied in the direction of plasma, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of size reduction, difficulty in etching features, etc., and achieve the effect of enhancing the uniformity of distribution

Inactive Publication Date: 2006-08-02
LAM RES CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, modern integrated circuits are characterized by reduced dimensions, and it is increasingly difficult to etch the desired features conventionally using conventional plasma processing systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing system with dynamic gas distribution control
  • Plasma processing system with dynamic gas distribution control
  • Plasma processing system with dynamic gas distribution control

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention relates to improved apparatus and methods for etching processes in plasma processing systems. The present invention enables improved injection control of process gases injected into a plasma processing chamber. As a result, the etch process can be better controlled, which becomes increasingly important for subsequently achieving smaller feature sizes. The present invention also reduces defects on etched substrates, thereby improving manufacturing yield.

[0030] An embodiment of this aspect of the invention will be described below with reference to FIGS. 1 to 5 . However, those skilled in the art should understand that the detailed description made here with reference to these figures is only for explaining the invention, but the scope of the invention is not limited by these embodiments.

[0031] In one embodiment, a plasma processing system including a plasma processing chamber is disclosed. The plasma processing chamber is connected to the ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

Description

[0001] Cross References to Applications [0002] This application is related to the following concurrently filed U.S. patent applications: [0003] Application No.: 09 / 439661, title "IMPROVED PLASMAPROCESSING SYSTEMS AND METHODS THEREFOR"; (lawyer case file No.: LAM1P122 / P0527); [0004] Application No.: 09 / 470236, titled "PLASMA PROCESSING SYSTEMWITH DYNAMIC GAS DISTRIBUTION CONTROL"; (Attorney Docket No.: LAM1P123 / P0557) [0005] Application No.: 09 / 439675, name "TEMPERATURE CONTROLSYSTEM FOR PLASMA PROCESSING APPARATUS"; (lawyer file No.: LAM1P124 / P0558) [0006] Application No.: 09 / 440418, titled "METHOD AND APPARATUS FORPRODUCING UNIFORM PROCESS RATES"; (Attorney Docket No.: LAM1P129 / P0560) [0007] Application No: 09 / 440794 titled "MATERIALS AND GASCHEMISTRIES FOR PLASMA PROCESSING SYSTEMS"; Attorney Docket No: LAM1P128 / P0561) [0008] Application No.: 09 / 439759, titled "METHOD AND APPARATUS FORCONTROLLING THE VOLUME OF PLASMA"; (Attorney Docket No.: LAM1P129 / P0593) ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/3065H05H1/00H05H1/46
CPCH01J37/32449H01J37/3244H01L21/3065
Inventor A·D·拜利三世A·M·舍普D·J·赫姆克尔M·H·维尔科克森
Owner LAM RES CORP