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Method for producing low dielectric constant material layer

A technology of low dielectric constant material and manufacturing method, applied in semiconductor/solid state device manufacturing, circuits, electrical components, etc., can solve the problem that the bonding between silicon-containing inorganic dielectric layer and organic low dielectric constant material layer cannot be further improved. and other problems to achieve the effect of preventing peeling and enhancing bonding

Inactive Publication Date: 2008-06-25
UNITED MICROELECTRONICS CORP
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  • Description
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  • Application Information

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Problems solved by technology

However, since the adhesion of HMDS to the organic low dielectric constant material layer is only slightly better than that of the silicon-containing inorganic dielectric layer, the adhesion between the silicon-containing inorganic dielectric layer and the organic low dielectric constant material layer cannot be further improved.

Method used

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  • Method for producing low dielectric constant material layer
  • Method for producing low dielectric constant material layer

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Embodiment Construction

[0013] The following is the manufacturing method of the low dielectric constant material layer according to the preferred embodiment of the present invention. The low dielectric constant material layer is the main body of the interlayer dielectric layer (ILD). The steps of this method are detailed below.

[0014] First, a polymer material layer is formed on a substrate, such as by spin-on coating, and then the polymer material layer is cured. The composition of this polymer material layer is, for example, commercial product SiLK produced by Dow Chemicals (Dow Chemicals), its active ingredient is an aromatic compound with ethynyl (ethynyl), and this active ingredient will Polymerize to become a polymer.

[0015] Then, a bonding material layer is formed on the polymer material layer, the main component of which is an organosilicon compound. Please refer to figure 1 , the organosilicon compound 110 has a connected silicon-containing segment 110a and an unsaturated hydrocarbon ...

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Abstract

A production method for low-dielectric constant material layer includes the following steps: first forming a nmacromolecular material layer on the to be cured, then forming a grafting material layer on it with the main component of organic silicon compound which has a connected siliceous segment and an unsaturated parbon hydrogen segment to be aged to make the organic silicon compound react with macromolecular amterials to generate key bond so that the macromolecular material layer has a siliceous surface and besides, the above mentioned macromolecular material layer can be aged at the same time with the grafting material layers.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, and in particular to a manufacturing method of a low-k dielectric material layer (Low-k Dielectric Material Layer). Background technique [0002] Low dielectric constant materials are mostly used in Ultra-Large Scale Integrated (ULSI) Circuit manufacturing processes as the "Inter-Layer Dielectrics" (Inter-Layer Dielectrics, ILD) between different wire layers. Material. This is because the use of low dielectric constant materials can greatly reduce the resistance and capacitance delay effect (RC Delay) of the device and increase its performance; and the thermal stability of low dielectric constant materials also meets the requirements of the manufacturing process. However, for low dielectric constant materials in the form of organic polymers, due to their insufficient mechanical strength, it is easy to be used in the chemical mechanical polishing (CMP) step of the subsequent damasc...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L21/3105
Inventor 谢宗棠蔡正原
Owner UNITED MICROELECTRONICS CORP