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Nozzle of polycrystalline-silicon furnace

A technology of nozzles and silicon furnaces, applied in crystal growth, silicon compound, single crystal growth, etc., can solve the problems of large difference in resistance value and low resistivity of polysilicon film

Inactive Publication Date: 2008-10-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
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Problems solved by technology

The larger the polysilicon grain, the faster the carrier migration speed, which finally leads to the lower resistivity of the polysilicon film with larger grains
[0005] Therefore, when the current polysilicon growth process is applied to high-resistance products, there will be a same polysilicon growth device, and the resistance values ​​​​of each position in the furnace are very different.

Method used

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  • Nozzle of polycrystalline-silicon furnace
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  • Nozzle of polycrystalline-silicon furnace

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Embodiment Construction

[0015] The key to solving the problem of differences in resistance values ​​at various positions in the furnace is to ensure that the deposition rate at each position in the furnace is consistent and at the same time ensure that the deposition temperature at each position in the furnace is the same. If the gas supply of silane is increased while the gas reaction in the furnace is consumed, the partial pressure ratio of the silane gas participating in the reaction will remain unchanged. To achieve the same deposition rate at each position in the furnace at the same temperature, and finally to minimize the difference in resistance and film thickness in the furnace.

[0016] The nozzle of the polysilicon furnace of the present invention is as shown in Figure 4, on the basis of the nozzle of the existing polysilicon furnace (referring to Fig. 3 shown in Fig. 3), the gas nozzle leading into the silane in the furnace is lengthened, and on the tube wall of its extended part Add some ...

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Abstract

A nozzle of polycrystalline silicon stove can control grain diameter difference in polycrystalline silicon stove, decrease impedance difference in polycrystalline silicon device and increase yield of product. An extended part is added at end of the nozzle, whose include angle with nozzle is right angle with multiple outlets, silane gas nozzle in stove is lengthened while outlets are added on the pipe wall of extended part, as a result, each part keep same deposition ratio at same temperature.

Description

technical field [0001] The invention relates to a polysilicon furnace used for growing polysilicon, in particular to a nozzle of the polysilicon furnace. Background technique [0002] Such as figure 2 As shown, most of the current polysilicon growth devices adopt the gas supply method of gas flowing in from one side. With the continuous consumption of gas, the partial pressure ratio of silane in each position in the furnace is not completely consistent. To keep the deposition rate at each position in the furnace consistent, the deposition temperature at each position in the furnace must be adjusted. But this will cause the difference in the grain size of polysilicon growth, which will lead to the difference in the resistance value of each position in the furnace. [0003] In order to keep the deposition rate consistent at each position in the furnace, the deposition temperature at each position in the furnace is different. In the polysilicon growth process, the size of p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/027C30B25/00C30B25/14B01J19/26
Inventor 董颖
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP