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Device and method for reducing generation of 4H-SiC polymorphic defects

A 4h-sic, defect technology, applied in polycrystalline material growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as poor crystal growth quality, achieve crucible stability, save investment, and reduce crystal growth defects. Effect

Inactive Publication Date: 2021-11-23
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention solves the problem that the existing crystal growth device for growing 4H-SiC crystals tends to have multiple crystal forms and poor crystal growth quality during the crystal growth process, and further discloses "a method for reducing polytype defects of 4H-SiC device and method for producing

Method used

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  • Device and method for reducing generation of 4H-SiC polymorphic defects
  • Device and method for reducing generation of 4H-SiC polymorphic defects

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specific Embodiment approach 1

[0027] Specific implementation mode one: combine Figure 1-Figure 2 Describe this embodiment, a device for reducing the occurrence of 4H-SiC polytype defects in this embodiment, including a crucible upper cover 1, an outer crucible 3, an inner crucible 4, a connecting plate 6, a support table 7, an induction coil 8 and a quartz tube 9. The outer crucible 3 is set on the upper side of the support platform 7, the inner crucible 4 is set inside the outer crucible 3, the crucible upper cover 1 is arranged on the outer crucible 3, the seed crystal 2 is arranged on the inner wall of the crucible upper cover 1, and the inner crucible 4 Filled with raw material 5, the inner crucible 4 is arranged on the connection plate 6, the connection plate 6 is threadedly connected with the threaded rod 11, the threaded rod 11 is arranged in the support platform 7 and connected with the inner crucible 4 through the connection plate 6, the support platform 7 is connected with the inner crucible 4 T...

specific Embodiment approach 2

[0028] Specific implementation mode two: combination Figure 1-Figure 2 Describe this embodiment, a device for reducing the generation of 4H-SiC multi-type defects in this embodiment, also includes a motor 10, the motor 10 is arranged in the support table 7, the motor 10 is connected to one end of the threaded rod 11, and the threaded rod 11 passes through The motor 10 drives the rotation, and the threaded rod 11 can also be driven to rotate by a hand wheel or other ways that those skilled in the art can think of.

specific Embodiment approach 3

[0029] Specific implementation mode three: combination Figure 1-Figure 2 Describe this embodiment, a device for reducing the occurrence of 4H-SiC multi-type defects in this embodiment, a lifting device 12 is installed on the inner wall of the support table 7, and the lifting device 12 includes a first lifting device 13 and a second lifting device 14 , the first lifting device 13 and the second lifting device 14 are connected to the connecting plate 6 respectively, the first lifting device 13 includes a first fixing part 17 and a first lifting rod 15, and the first fixing part 17 is fixedly installed on the supporting platform 7 On the inner wall of the inner crucible, the first fixing member 17 is provided with a first lifting rod 15, and the first lifting rod 15 passes through the connecting plate 6 and is arranged at the gap between the outer crucible 3 and the inner crucible 4, and the second lifting device 14 includes a second Fixing piece 18 and the second lifting rod 16...

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Abstract

The invention discloses a device and a method for reducing generation of 4H-SiC polymorphic defects, and belongs to the field of crystal growth devices. The crystal growth device solves the problems that an existing crystal growth device for growing 4H-SiC crystals is prone to generating multiple crystal forms in the crystal growth process, and the crystal growth quality is poor. The device comprises a crucible upper cover, an outer crucible, an inner crucible, a connecting plate, a supporting table, an induction coil and a quartz tube, the outer crucible is arranged on the upper side of the supporting table, the inner crucible is sleeved with the outer crucible, the crucible upper cover is arranged on the outer crucible, seed crystals are arranged on the inner wall of the crucible upper cover, the inner crucible is filled with raw materials, the inner crucible is arranged on the connecting plate, the connecting plate is in threaded connection with the threaded rod, the threaded rod is arranged in the supporting table and penetrates through the connecting plate to be connected with the inner crucible, the supporting table and the outer crucible are arranged in the quartz tube, and the induction coil is arranged on the outer side of the quartz tube. According to the crystal growth device and method, the stable crystal growth rate is realized, and the generation of crystal growth defects is reduced.

Description

technical field [0001] The invention relates to a crystal growth device and method, in particular to a crystal growth device for 4H-SiC crystals. Background technique [0002] Nowadays, the physical vapor transport method (PVT) is the mainstream preparation method of wide bandgap semiconductor materials. However, due to the problems of thermal field and raw material carrying device, the crystal quality is not good, the growth is not uniform enough, and the thickness cannot meet the market demand. And due to the change of the induction heating principle and the crystal growth interface and other factors, the temperature at the crystal growth interface will change greatly, while the 4H-SiC growth temperature range is narrow, and the growth interface temperature is slightly higher than the 4H-SiC growth temperature, so it is easy to 6H-SiC appears, resulting in polymorphism, and due to the different crystal orientations of different crystal forms, grain boundaries will appear, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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