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Method for preparing vanadium pentoxide film by sol-gel method

A technology of vanadium pentoxide and gel method, applied in the direction of vanadium oxide, etc., can solve the problems of rough and porous films, low deposition rate, and many oxygen vacancies in films, and achieve dense, smooth and smooth surfaces, simple preparation process, and low energy consumption Effect

Active Publication Date: 2021-09-17
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention will solve the problem of V prepared by existing vacuum evaporation method and sputtering method. 2 o 5 There are many oxygen vacancies in the film, poor process stability, low deposition rate, and low-valence vanadium oxides; the sol-gel method prepares V 2 o 5 Thin film requires high temperature melting V 2 o 5 Powder, long aging time, long preparation cycle, rough and porous films, low quality problems, and provide a method for preparing vanadium pentoxide films by sol-gel method

Method used

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  • Method for preparing vanadium pentoxide film by sol-gel method
  • Method for preparing vanadium pentoxide film by sol-gel method
  • Method for preparing vanadium pentoxide film by sol-gel method

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specific Embodiment approach 1

[0025] Specific embodiment one: a kind of sol-gel method described in the present embodiment prepares the method for vanadium pentoxide thin film, and it is carried out according to the following steps:

[0026] 1. Preparation V 2 o 5 Sol:

[0027] Add VOCl to absolute ethanol 3 Liquid, stir evenly, let stand for 5min~20min, get VO(OC 2 h 5 ) 3 solution, under stirring conditions, to VO(OC 2 h 5 ) 3 Distilled water was added dropwise into the solution, and stirred evenly to obtain V 2 o 5 sol, and finally aged to obtain the aged V 2 o 5 Sol;

[0028] The VOCl 3 The molar ratio of liquid and dehydrated alcohol is 1:(100~400); The VOCl 3 The molar ratio of liquid to distilled water is 1:(5~50);

[0029] 2. Deposition and film formation:

[0030] ①, using the film-forming method, the aged V 2 o 5 The sol is formed into a film on the substrate, and then heat-treated at a temperature of 100°C to 300°C for 0.5h to 1.5h to obtain a single layer of V 2 o 5 film;

...

specific Embodiment approach 2

[0039] Specific embodiment two: the difference between this embodiment and specific embodiment one is: in step one, under the stirring condition that the rotating speed is 50rpm~200rpm, to VO(OC 2 h 5 ) 3 Distilled water was added dropwise to the solution. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0040] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that: in step one, under agitation conditions, the addition rate is 0.05mL / s~2mL / s, to VO(OC 2 h 5 ) 3 Distilled water was added dropwise to the solution. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a method for preparing a vanadium pentoxide film, in particular to a method for preparing a vanadium pentoxide film through a sol-gel method. The invention solves the problems that the V2O5 film prepared by the existing vacuum evaporation method and sputtering method has more oxygen vacancies, poor process stability and low deposition rate, and contains low-valence vanadium oxide; and the problems that high-temperature melting of V2O5 powder is needed when a V2O5 thin film is prepared through a sol-gel method, the aging time is long, the preparation period is long, and the thin film is generally rough, porous and low in quality are solved. The method comprises the following steps: 1, preparing V2O5 sol; and 2, depositing to form the film. The method is used for preparing the vanadium pentoxide film through the sol-gel method.

Description

technical field [0001] The invention relates to a method for preparing vanadium pentoxide film. Background technique [0002] V 2 o 5 It can react with lithium to form lithium vanadate, and because of its special layered structure, V 2 o 5 When thin films are used as cathode materials for lithium-ion batteries, they can enable lithium-ion batteries to have a much higher battery capacity than current commercial applications, and have broad application potential. V 2 o 5 The gas molecules adsorbed on the surface of the film will cause the state of the surface to change: through the interaction of hydrogen bonds and the vanadium oxide layer, its conductivity will change. V 2 o 5 Thin films can also be used in gas and humidity sensors. V 2 o 5 It has a semiconductor-metal phase transition, and it is in a metallic state when the temperature is greater than 257 ° C. It has high reflectivity and low transmittance for infrared light, so that the laser cannot cause damage ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G31/02
CPCC01G31/02C01P2004/04C01P2004/03C01P2002/85C01P2004/01C01P2004/20Y02E60/10
Inventor 吴宜勇吴蔚然朱睿健孙成月赵会阳
Owner HARBIN INST OF TECH
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