Semiconductor structure forming method

Abstract

The invention discloses a semiconductor structure forming method. The method comprises steps: a substrate is provided; an interface layer is formed on the surface of the substrate; first annealing treatment is carried out on the interface layer, and the first annealing treatment is carried out in a nitrogen-containing atmosphere to enable a nitrogen-containing layer to be formed on the surface of the interface layer; a high k gate dielectric layer is formed on the surface of the nitrogen-containing layer; second annealing treatment is carried out on the high k gate dielectric layer to enable nitrogen ions to be diffused to the high k gate dielectric layer; and a gate electrode layer is formed on the surface of the high k gate dielectric layer. The dielectric relaxation problem of the high k gate dielectric layer is improved, and thus, the electrical performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] The main semiconductor device of an integrated circuit, especially a very large scale integrated circuit, is a metal-oxide-semiconductor field effect transistor (MOS transistor). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices are continuously reduced, and the geometric dimensions of semiconductor structures are continuously reduced following Moore's law. When the size of the semiconductor structure is reduced to a certain extent, various secondary effects caused by the physical limit of the semiconductor structure appear one after another, and it becomes more and more difficult to scale down the feature size of the semiconductor structure. Among them, in the field of semiconductor manufacturing, the most ...

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Problems solved by technology

[0004] Although the introduction of high-k metal gates can improve the electrical properties of semiconductor structures to a certain extent, the electrical properties of semiconductor structures formed by existing technologies still need to be improved.

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